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FF2600UXTR33T2M1BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 3300V AG-XHP2K33. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF2600UXTR33T2M1BPSA1
- Description：MOSFET 2N-CH 3300V AG-XHP2K33
- Series：CoolSiC™
- Mfr：Infineon Technologies
- Package：Box
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：3300V (3.3kV)
- Current - Continuous Drain (Id) @ 25°C：720A (Tc)
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 750A, 15V
- Vgs(th) (Max) @ Id：5.55V @ 675mA
- Gate Charge (Qg) (Max) @ Vgs：3750nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：152000pF @ 1.8kV
- Power - Max：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-XHP2K33
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF2600UXTR33T2M1BPSA1
FET, MOSFET Arrays Overview
The FF2600UXTR33T2M1BPSA1 is a high-power XHP™2 module featuring CoolSiC™ Trench MOSFETs. It provides a drain-source voltage of 3300 V and a nominal drain current of 750 A, with a repetitive peak current rating of 1500 A. The device supports an operating junction temperature up to 175°C and utilizes an AlSiC base plate for enhanced thermal cycling capability.
FET, MOSFET Arrays Feature Summary
- Utilizes CoolSiC™ Trench MOSFET technology for low switching losses and high current density
- Features an AlN substrate and AlSiC base plate to minimize thermal resistance and increase durability
- Designed with low inductive characteristics and high creepage/clearance distances for robust insulation
FET, MOSFET Arrays Applications
- Traction drives
- High-power converters
- High-frequency switching applications
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm mechanical variations or packaging details. Ensure compatibility with required gate drive voltages and mounting torque specifications before integration. Cross-reference the datasheet revision date to validate technical parameters.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring high power density and efficient thermal management. The XHP™2 package offers superior insulation coordination with a CTI greater than 600. Consider the 175°C operating temperature limit and the specific thermal resistance values when designing the heat sink interface.
FET, MOSFET Arrays Part Context
This module belongs to Infineon's CoolSiC™ portfolio, specifically designed for demanding industrial environments. It integrates advanced silicon carbide technology within the XHP™2 form factor, targeting solutions that require high reliability and compact footprint in heavy-duty power conversion systems.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume cross-compatibility with other series without validating electrical ratings and pin configurations.
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