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The FF300R12KS4HOSA1 is a dual IGBT module from Infineon's IGBT2 Fast series, designed for high-frequency switching applications. It features a half-bridge topology with a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC) of 370 A at TC=25°C. The module utilizes TRENCHSTOP technology to achieve low switching losses. Key electrical parameters include a typical collector-emitter saturation voltage (VCEsat) of 3.2 V at 25°C and a gate charge (QG) of 3.2 µC. Total power dissipation reaches 1950 W at TC=25°C. The unit weighs 340 g and operates within a junction temperature range of -40°C to 125°C.
Verify the specific ordering suffix HOSA1 against official Infineon documentation to confirm exact manufacturing lot or packaging variations. Ensure compatibility with standard AG-62MM-1 mounting hardware. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement specifications.
Select this module for applications requiring high current density and fast switching speeds within a 1200 V rating. Consider the thermal resistance values when designing heatsink solutions. Evaluate gate resistor requirements to manage switching losses and voltage overshoot effectively during hard-switching operations.
This component belongs to the Infineon IGBT2 Fast series, specifically the 62mm C-series modules. These modules are engineered for industrial power electronics where efficiency and switching speed are critical. The part number indicates a specific configuration within the broader family of 1200 V silicon IGBT modules.
Direct replacements must match the 62 mm package footprint and pinout. Verify that substitute parts offer comparable VCES, IC ratings, and thermal characteristics. Cross-reference with other Infineon IGBT2 series variants if available.