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Product Detailed Parameters
- Description：IGBT MOD 1200V 480A 1450W
- Series：C
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 300A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：480 A
- Power - Max：1450 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：21 nF @ 25 V
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Overview
The FF300R12KT3HOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT3 technology and an Emitter Controlled High Efficiency diode. It features a collector-emitter voltage of 1200 V, a continuous DC collector current of 300 A at 80°C (480 A at 25°C), and a repetitive peak collector current of 600 A. The total power dissipation is rated at 1450 W. Operating junction temperatures range from -40°C to 125°C. Key electrical parameters include a typical VCE(sat) of 1.90 V at 25°C and 2.15 V at 125°C, with a forward voltage of 1.65 V for the diode.
Feature Summary
- Incorporates fast Trench/Fieldstop IGBT3 technology combined with an Emitter Controlled High Efficiency diode for optimized switching characteristics.
- Designed as a 62mm C-series module suitable for frequency-controlled inverter drives.
- Features UL/CSA certification compliant with UL1557 standard E83336.
Applications
- Frequency controlled inverter drives
- Industrial inverters
Procurement Notes
Verify the exact ordering suffix against official documentation to confirm specific manufacturing revisions or packaging variations. Confirm RoHS compliance status and check for any lifecycle notices such as NRND before procurement. Ensure that thermal interface material specifications match the application requirements for optimal heat dissipation.
Selection Notes
Select this module based on its 1200V rating and 300A continuous current capability. Evaluate the thermal resistance values (RthJC) to ensure adequate heatsinking for the intended duty cycle. Consider the internal gate resistor and switching energy losses when designing the gate drive circuitry for optimal performance.
Part Context
This component belongs to the 62mm C-series module family from Infineon Technologies. It utilizes silicon-based IGBT3 technology. The module is designed for high-power applications requiring robust switching capabilities and efficient thermal management within a standardized package footprint.
Replacement Considerations
Consult official Infineon documentation for confirmed substitute part numbers. Verify pin compatibility and thermal characteristics before considering alternatives.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 125°C.
What is the isolation test voltage?
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.
What is the typical turn-off energy loss per pulse?
The typical turn-off energy loss per pulse is 24.5 mJ at 25°C and 37.0 mJ at 125°C.
