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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF300R12KT3PEHOSA1 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT3 technology and an Emitter Controlled HE diode. It includes pre-applied thermal interface material (TIM). The device has a collector-emitter voltage of 1200 V, a continuous DC collector current of 300 A at 65°C heatsink temperature, and a repetitive peak collector current of 600 A. Typical saturation voltage is 1.70 V at 25°C and 1.90 V at 125°C. Diode forward voltage is typically 1.65 V at 25°C. Thermal resistance from junction to heatsink is 0.116 K/W for the IGBT and 0.183 K/W for the diode.
Verify the specific ordering suffix against official Infineon documentation to confirm component specifications. Ensure that any additional characters in the part number do not alter the electrical or mechanical parameters defined in the datasheet. Confirm compliance with relevant safety standards before integration into final equipment designs.
Select this module for applications requiring high power density and robust short-circuit withstand capability. Consider the pre-applied TIM when designing the cooling system interface. Verify that the operating temperature range and mounting torque requirements align with the system's mechanical constraints and thermal management strategy.
This component belongs to the 62mm C-Series family of modules manufactured by Infineon Technologies. It utilizes silicon-based IGBT3 technology combined with fast recovery diodes. The series is designed for industrial power electronics applications where reliability and efficiency are critical performance factors.
Consult official Infineon cross-reference lists for verified substitutes. Ensure replacement parts match the 62mm package dimensions and pinout configuration. Verify that alternative components meet or exceed the original voltage, current, and thermal specifications.