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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF300R12ME4BOSA1 is a silicon-based IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4-E4 technology within the EconoDUAL™ package. It features a dual configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 450 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.75 V and a power dissipation capacity of 1.6 kW. Operating temperatures range from -40°C to +125°C, with a maximum gate-emitter voltage of 20 V.
Verify the complete part number including the BOSA1 suffix against official Infineon documentation to ensure correct revision status. Confirm RoHS compliance details and specific manufacturing lot requirements prior to procurement. Cross-reference datasheet revisions to avoid ordering obsolete variants.
Select this component for applications requiring high current handling up to 450 A and 1.2 kV blocking capability. Ensure the cooling system accommodates the 1.6 kW power dissipation rating. Verify that the control circuitry provides the required 20 V gate drive limits and matches the switching characteristics of the IGBT4-E4 generation.
This module belongs to the EconoDUAL family, designed for industrial power conversion. It represents an evolution in IGBT modules, offering improved efficiency compared to previous generations through advanced trench fieldstop technology while maintaining standard mounting dimensions for compatibility.
FF300R12ME3BOSA1 is a documented alternative within the same product line.