FF300R17KE3HOSA1

Overview

The FF300R17KE3HOSA1 is a 62mm C-series IGBT module featuring Trench/Fieldstop IGBT3 technology and an Emitter Controlled diode. It provides a collector-emitter voltage of 1700 V, with continuous DC collector currents rated at 404 A (at 25°C) or 300 A (at 80°C). The module has a total power dissipation of 1450 W at 25°C, a maximum gate-emitter peak voltage of ±20 V, and operates within a junction temperature range of -40°C to 125°C.

Feature Summary

• Utilizes Trench/Fieldstop IGBT3 technology for optimized switching performance.
• Incorporates an Emitter Controlled diode to manage reverse recovery characteristics.
• Designed in a robust 62mm C-series housing for high-power applications.

Applications

• Industrial motor drives
• Medium-voltage inverters
• Uninterruptible power supplies

Procurement Notes

Verify the specific ordering suffix HOSA1 against official Infineon documentation to confirm exact manufacturing specifications and compliance status. Ensure that the procurement channel sources genuine components directly from authorized distributors or the manufacturer to prevent counterfeit products. Cross-reference the datasheet revision date with the production batch to ensure technical alignment with current design requirements.

Selection Notes

Select this component based on its 1700 V blocking capability and 300 A to 404 A current ratings. Evaluate thermal management requirements using the specified junction-to-case thermal resistance values. Confirm compatibility with standard screw mounting procedures and verify that the operating junction temperature range meets the environmental constraints of the target application system.

Part Context

This module belongs to the Infineon Trenchstop IGBT3 family, designed for high-efficiency power conversion. It represents a mature silicon technology platform offering reliable performance in industrial settings. The 62mm form factor allows for standardized mechanical integration within larger power electronic assemblies and heat sink structures.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Consider newer generations such as the IGBT4 series if improved switching losses are required, ensuring electrical and mechanical parameters remain compatible with the existing system design.

FAQ

What is the maximum repetitive peak forward current for the integrated diode?

The maximum repetitive peak forward current (IFRM) for the integrated diode is 600 A with a pulse duration of 1 ms.

How does the collector-emitter saturation voltage vary with temperature?

At 25°C, the typical VCEsat is 2.00 V, while at 125°C it increases to a typical value of 2.40 V under rated conditions.

What is the isolation test voltage rating for this module?

The module supports an isolation test voltage (VISOL) of 3.4 kV RMS at 50 Hz for one minute.