FF33MR12W1M1HPB11BPSA1

$36.64

Description：MOSFET
Series：-

SKU:524494053573 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF33MR12W1M1HPB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF33MR12W1M1HPB11BPSA1

Description：MOSFET
Series：-
Mfr：Infineon Technologies
Package：Tray
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF33MR12W1M1HPB11BPSA1

FF33MR12W1M1HPB11BPSA1

FET, MOSFET Arrays Overview

The FF33MR12W1M1HP_B11 is a half-bridge module utilizing CoolSiC Trench MOSFET technology. It features a 1200 V drain-source voltage rating and supports a continuous DC drain current of 25 A at 175 °C junction temperature, with a repetitive peak current capability of 50 A. The device incorporates PressFIT contact technology for mechanical mounting and includes an integrated NTC thermistor for thermal monitoring. Key electrical characteristics include a maximum on-resistance of 69.4 mΩ at 175 °C and a stray inductance of 18 nH.

FET, MOSFET Arrays Feature Summary

Integrates CoolSiC Trench MOSFETs for low switching losses and high-frequency operation
Features PressFIT contact technology combined with integrated mounting clamps for rugged installation
Includes a pre-applied thermal interface material to simplify assembly
Contains an integrated NTC temperature sensor for precise thermal management

FET, MOSFET Arrays Applications

High-frequency switching applications
DC/DC converters
Motor drives
UPS systems

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (e.g., v00_20) against the manufacturing date code on the component label. Confirm that the application environment complies with the specified industrial qualification standards. Ensure gate drive voltages remain within the recommended static limits to prevent long-term degradation of the silicon carbide components.

FET, MOSFET Arrays Selection Notes

Select this module when designing circuits requiring high switching frequencies and low conduction losses at elevated temperatures. The 1200 V rating provides sufficient headroom for common bus voltages. Consider the 18 nH internal stray inductance for snubber design and EMI mitigation strategies in high-speed switching topologies.

FET, MOSFET Arrays Part Context

This component belongs to Infineon's EasyDUAL series of discrete semiconductor modules. It utilizes the M1H product family architecture, which is optimized for industrial power electronics. The module integrates both the active silicon carbide switches and passive thermal management elements into a single compact package.