FF4000UXTR33T2M1BPSA1

$3,113.13

Description：MOSFET 2 N-CH 3300V XHP2K17
Series：XHP™2

SKU:b449799a1b07 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF4000UXTR33T2M1BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2 N-CH 3300V XHP2K17. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF4000UXTR33T2M1BPSA1

Description：MOSFET 2 N-CH 3300V XHP2K17
Series：XHP™2
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：3300V (3.3kV)
Current - Continuous Drain (Id) @ 25°C：500A (Tc)
Rds On (Max) @ Id, Vgs：4.8mOhm @ 500A, 15V
Vgs(th) (Max) @ Id：5.55V @ 450mA
Gate Charge (Qg) (Max) @ Vgs：2500nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：101000pF @ 1800V
Power - Max：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-XHP2K17
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF4000UXTR33T2M1BPSA1

FF4000UXTR33T2M1BPSA1

FET, MOSFET Arrays Overview

The FF4000UXTR33T2M1BPSA1 is a CoolSiC™ Trench MOSFET module in the XHP™2 package. It features a drain-source voltage of 3300 V, continuous DC drain current of 500 A at 175°C junction temperature, and repetitive peak current of 1000 A. The on-state resistance is typically 4.8 mΩ at 25°C. Operating junction temperature ranges from -40°C to 175°C. The module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C.

FET, MOSFET Arrays Feature Summary

Utilizes CoolSiC™ Trench MOSFET technology for low switching losses and high current density.
Features an AlSiC base plate and AlN substrate to enhance thermal cycling capability and reduce thermal resistance.
Provides high creepage and clearance distances with a comparative tracking index exceeding 600.
Includes an integrated NTC thermistor for precise temperature monitoring.

FET, MOSFET Arrays Applications

Traction drives
High-power converters
High-frequency switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix BPSA1 against official Infineon documentation to confirm exact configuration details. Ensure compliance with IEC standards for industrial application validation. Confirm mounting torque specifications for M6 screws (4.25 to 5.75 Nm) and terminal connections during assembly.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high power density and robust insulation coordination. Consider the 3300 V rating and 500 A continuous current capacity for demanding power conversion tasks. Evaluate the thermal management requirements given the 175°C operating limit and the specific thermal resistance values provided in the datasheet.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon CoolSiC™ G2 MOSFET family, specifically utilizing the XHP™2 packaging technology. It represents a high-power discrete solution designed for efficiency and reliability in electric mobility and industrial power electronics sectors.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers within the XHP™2 series or compatible CoolSiC™ modules. Cross-reference electrical ratings and mechanical dimensions before implementation.