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The FF400R12KE3HOSA1 is a dual half-bridge IGBT module from Infineon's 62mm C-series, utilizing Trench/Fieldstop IGBT3 technology and an emitter-controlled high-efficiency diode. It features a collector-emitter voltage of 1200 V, a continuous DC collector current of 400 A at 80°C case temperature (580 A at 25°C), and a repetitive peak collector current of 800 A. The total power dissipation is rated at 2000 W. Key electrical parameters include a typical collector-emitter saturation voltage of 1.70 V at 25°C and a forward voltage of 1.65 V for the integrated diode. The module operates within a junction temperature range of -40°C to 125°C.
Verify the specific ordering suffix HOSA1 against official documentation to confirm RoHS compliance and manufacturing origin details. Ensure that the procurement channel provides valid traceability certificates matching the manufacturer's specifications. Cross-reference the datasheet revision date to ensure compatibility with your system requirements.
Select this component based on its 1200 V blocking voltage and 400 A nominal current ratings. Evaluate thermal management requirements using the specified junction-to-case thermal resistance values. Confirm that the gate drive circuitry supports the required ±15 V operating voltage and internal gate resistor characteristics for optimal switching speed control.
This module belongs to Infineon's 62mm C-series lineup, designed for industrial applications requiring reliable power switching. It utilizes silicon-based trench field-stop technology to balance conduction losses and switching speeds. The series is engineered for durability in demanding environments, offering standardized mounting dimensions for easy integration into existing power electronics architectures.
Public confirmed substitute part numbers: FF400R12KE3B2HOSA1.