FF400R12KT3HOSA1

$145.21

Description：IGBT MOD 1200V 580A 2000W
Series：C

SKU:36b9ad8d70e7 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 580A 2000W
Series：C
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：2 Independent
Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 400A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：580 A
Power - Max：2000 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：28 nF @ 25 V

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FF400R12KT3HOSA1

Overview

The FF400R12KT3HOSA1 is a dual IGBT module from Infineon's 62mm C-series, utilizing Trench/Fieldstop IGBT3 technology and an Emitter Controlled High Efficiency Diode. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 580 A at 25°C. The module has a total power dissipation of 2000 W and operates within a junction temperature range of -40°C to 125°C. Key electrical parameters include a typical saturation voltage of 1.70 V and a forward diode voltage of 1.65 V at 25°C. Thermal resistance from junction to case is 0.062 K/W for the IGBT and 0.11 K/W for the diode.

Feature Summary

Integrates fast Trench/Fieldstop IGBT3 with high-efficiency diode for optimized switching performance.
Features a compact 62 mm package design suitable for industrial mounting requirements.
Provides robust short-circuit capability with a maximum rated value of 1600 A.

Applications

Industrial motor drives
Medium-power inverter systems
Uninterruptible power supplies (UPS)

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific ordering suffixes that may affect packaging or pinout. Ensure the supplier provides valid traceability documentation matching the datasheet specifications before finalizing acquisition.

Selection Notes

Evaluate thermal management capabilities against the specified junction-to-case resistance values. Verify gate drive compatibility with the recommended ±15 V operating levels and internal gate resistor characteristics. Assess mechanical constraints regarding the 62 mm footprint and required mounting torque specifications for reliable installation.

Part Context

This component belongs to Infineon's 62mm C-series family, designed for industrial applications requiring high power density. It represents the IGBT3 generation, combining trench gate technology with field-stop architecture to improve switching efficiency compared to previous generations while maintaining rugged operational characteristics.