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The FF450R12KE4EHOSA1 is a dual N-channel IGBT module from Infineon Technologies, utilizing Trenchstop IGBT4-E4 technology. It features a common emitter configuration within a 62 mm package. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 450 A at 25°C, with a repetitive peak current rating of 900 A. The typical collector-emitter saturation voltage is 1.75 V at 25°C junction temperature. Maximum power dissipation is rated at 2400 W. Operating temperatures range from -40°C to +150°C.
Verify the exact suffix against official Infineon documentation to confirm specific manufacturing lot or testing variations. Ensure compatibility with existing gate drive circuits regarding voltage thresholds. Confirm RoHS compliance status through the manufacturer's certificate of conformity prior to final procurement decisions.
Select this component for designs requiring a dual IGBT configuration in a standard 62 mm form factor. Evaluate thermal management requirements based on the 2400 W power dissipation limit. Ensure the application voltage does not exceed the 1200 V rating under all transient conditions.
This module belongs to the Infineon 62 mm C-Series, which integrates Trench/Fieldstop IGBT4 technology. The series is engineered for medium to high-power applications, offering a balance between conduction losses and switching speeds suitable for modern power electronics systems.
Direct substitutes include FF450R12KE4 and FD450R12KE4HPSA1. Verify pinout compatibility and thermal interface specifications before substitution. Cross-reference datasheets to ensure equivalent electrical ratings and package dimensions match the original design constraints.