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The FF450R12KE4HOSA1 is a 62mm C-series IGBT module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled diode. It has a collector-emitter voltage (VCES) of 1200 V, a continuous DC collector current (IC) of 520 A at 25°C, and a repetitive peak collector current (ICRM) of 900 A. The total power dissipation is 2400 W. Key electrical parameters include a maximum VCE(sat) of 2.15 V at 150°C, gate charge (QG) of 3.70 µC, input capacitance (Cies) of 28.0 nF, and turn-off energy loss (Eoff) of 56.0 mJ at 150°C. Thermal resistance from junction to case is 0.062 K/W for the IGBT and 0.11 K/W for the diode.
Verify the exact ordering suffix against official Infineon documentation to confirm specific manufacturing revisions or regional compliance markings. Ensure that the component matches the required thermal interface specifications and mounting torque values defined in the application notes before finalizing procurement orders.
Select this module for designs requiring high current density within a standard 62mm footprint. Evaluate the thermal resistance values against the system's heatsink capabilities to ensure junction temperatures remain within the specified -40°C to 150°C operating range under expected load conditions.
This component belongs to Infineon's 62mm C-Series family of IGBT modules. It represents a standardized form factor designed for industrial power electronics, offering a balance between high power handling capacity and compact physical dimensions suitable for various medium-power conversion architectures.
Direct replacements must match the 62mm package outline and 1200V rating. Verify pinout compatibility and thermal characteristics when considering alternative part numbers within the same manufacturer's portfolio.
The maximum repetitive peak collector current (ICRM) is 900 A for a pulse duration of 1 ms.
No, the datasheet does not list an integrated NTC thermistor as a feature of this specific module configuration.
The isolation test voltage (VISOL) is 4.0 kV RMS at 50 Hz for 1 minute.