FF450R12KT4PHOSA1

Overview

The FF450R12KT4PHOSA1 is a half-bridge IGBT module from Infineon's 62mm C-Series, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled HE diode. It features pre-applied thermal interface material. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V, a nominal continuous DC collector current (IC nom) of 450 A at TH = 70°C, and a repetitive peak collector current (ICRM) of 900 A. The typical collector-emitter saturation voltage (VCEsat) is 1.75 V at Tvj = 25°C. Thermal resistance from junction to heatsink (RthJH) is 0.0859 K/W for the IGBT and 0.145 K/W for the diode. Operating temperature range is -40°C to +150°C.

Feature Summary

• Incorporates fast Trench/Fieldstop IGBT4 technology combined with an Emitter Controlled HE diode for optimized switching performance.
• Features pre-applied thermal interface material to simplify assembly and ensure consistent thermal contact.
• Provides extended operating junction temperature capability up to 150°C with low VCEsat and low switching losses.
• Constructed with a copper baseplate and high creepage/clearance distances, supported by a CTI greater than 400.

Applications

• High power converters
• Motor drives
• UPS systems
• Wind turbines

Procurement Notes

Verify the specific suffix PHOSA1 against official documentation to confirm compliance details or regional variations. Confirm that the pre-applied thermal interface material requirements are met during storage and transport according to application notes. Ensure mounting torque specifications for M6 screws are strictly followed to maintain mechanical integrity and thermal performance.

Selection Notes

Select this module for applications requiring robust short-circuit behavior and high current density in a compact 62mm footprint. Consider the positive temperature coefficient of VCEsat for reliable parallel operation. Evaluate the stray inductance of 20 nH for circuit layout optimization. Verify gate drive requirements align with the specified internal gate resistor and charge values.

Part Context

This component belongs to the Infineon 62mm C-Series, designed for high-performance industrial applications. It represents the T4 generation of IGBT modules, offering improved efficiency over previous iterations. The part integrates both the IGBT switch and the anti-parallel diode into a single insulated package for use in inverter bridges.

Replacement Considerations

Direct substitutes within the same series include FF450R12KT4P. Cross-series replacements require careful evaluation of thermal resistance, pinout compatibility, and electrical ratings such as VCES and IC nom to ensure system performance is maintained without redesigning the cooling or gate drive circuits.