FF45MR12W1M1B11BOMA1

$50.63

Description：MOSFET 2N-CH 1200V AG-EASY1BM-2
Series：CoolSiC™+

SKU:e401467acf06 Category: FET, MOSFET Arrays Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

FF45MR12W1M1B11BOMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V AG-EASY1BM-2. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF45MR12W1M1B11BOMA1

Description：MOSFET 2N-CH 1200V AG-EASY1BM-2
Series：CoolSiC™+
Mfr：Infineon Technologies
Package：Bulk,Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：25A (Tj)
Rds On (Max) @ Id, Vgs：45mOhm @ 25A, 15V (Typ)
Vgs(th) (Max) @ Id：5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：1840pF @ 800V
Power - Max：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-EASY1BM-2
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF45MR12W1M1B11BOMA1

FF45MR12W1M1B11BOMA1

FET, MOSFET Arrays Overview

The FF45MR12W1M1B11BOMA1 is a CoolSiC MOSFET module manufactured by Infineon Technologies. It utilizes Silicon Carbide (SiC) technology and features an N-Channel configuration with a dual arrangement. The device has a drain-source breakdown voltage of 1.2 kV and a continuous drain current rating of 50 A. Its on-state resistance is specified at 11 mOhms, with a gate-source voltage range of -10 V to +20 V. The module employs a press-fit installation style within a module package, operating between -40 C and +150 C.

FET, MOSFET Arrays Feature Summary

Utilizes CoolSiC trench MOSFET technology for high-performance switching
Integrates negative temperature coefficient (NTC) temperature sensor
Features press-fit contact technology for secure mounting

FET, MOSFET Arrays Applications

Automotive power electronics
High-efficiency DC-DC converters
On-board chargers

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix BOMA1 against official Infineon documentation to confirm exact thermal and electrical specifications. Confirm availability status as distribution channels may list discontinued or obsolete inventory. Ensure compatibility with existing cooling systems and press-fit assembly tools before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high efficiency and compact size due to SiC material properties. Verify that the 1.2 kV rating and 50 A current capacity meet system requirements. Consider the integrated NTC sensor for precise thermal management in high-power density designs.

FET, MOSFET Arrays Part Context

This part belongs to the CoolSiC Module family from Infineon Technologies. It represents a hybridpack design combining SiC MOSFETs with an NTC sensor. The EasyDUAL PressFIT series focuses on robust mechanical connection and simplified assembly processes for demanding industrial and automotive environments.