FF4MR12W2M1HPB11BPSA1

$168.80

Description：MOSFET 2N-CH 1200V AG-EASY2B
Series：-

SKU:bc95dabf66e1 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF4MR12W2M1HPB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V AG-EASY2B. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF4MR12W2M1HPB11BPSA1

Description：MOSFET 2N-CH 1200V AG-EASY2B
Series：-
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：170A
Rds On (Max) @ Id, Vgs：4mOhm @ 200A, 18V
Vgs(th) (Max) @ Id：5.15V @ 80mA
Gate Charge (Qg) (Max) @ Vgs：594nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：17600pF @ 800V
Power - Max：20mW
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-EASY2B
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF4MR12W2M1HPB11BPSA1

FF4MR12W2M1HPB11BPSA1

FET, MOSFET Arrays Overview

The FF4MR12W2M1HPB11BPSA1 is a CoolSiC™ Trench MOSFET half-bridge module in the EasyDUAL package. It features a 1200 V drain-source voltage and a continuous DC current of 190 A at 175 °C junction temperature. The on-state resistance is 4 mΩ at 25 °C, with a maximum repetitive peak current of 400 A. The module integrates an NTC thermistor for thermal monitoring and utilizes PressFIT technology for mounting.

FET, MOSFET Arrays Feature Summary

Utilizes CoolSiC™ Trench MOSFET technology for low switching losses and high current density
Features integrated mounting clamps and PressFIT contact technology for rugged installation
Includes pre-applied thermal interface material and an integrated NTC temperature sensor

FET, MOSFET Arrays Applications

Solar applications
High-frequency switching applications
DC/DC converters
UPS systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm datasheet revision status prior to integration. Ensure gate driver compatibility as specified in manufacturer guidelines. Validate insulation coordination requirements against application standards. Check storage conditions to maintain thermal interface material integrity.

FET, MOSFET Arrays Selection Notes

Select this module for designs requiring high efficiency and compact form factors. Consider the 1200 V rating for medium-voltage power conversion topologies. Evaluate thermal management needs based on the specified junction-to-heatsink resistance. Verify that system operating temperatures remain within the -40 °C to 175 °C range. Assess gate drive voltage requirements against the recommended 15 V to 18 V range.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon EasyDUAL series, designed for industrial power modules. It represents the CoolSiC™ product line, utilizing silicon carbide technology for superior performance compared to traditional silicon devices. The module is qualified for industrial applications according to IEC standards.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Cross-reference electrical parameters such as voltage ratings and current capabilities before substitution.