FF4MR20KM1HPHPSA1

$433.16

Description：MOSFET 2N-CH 2000V AG-62MMHB
Series：C, CoolSiC™

SKU:4b9fc8932104 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF4MR20KM1HPHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 2000V AG-62MMHB. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF4MR20KM1HPHPSA1

Description：MOSFET 2N-CH 2000V AG-62MMHB
Series：C, CoolSiC™
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：2000V (2kV)
Current - Continuous Drain (Id) @ 25°C：280A (Tc)
Rds On (Max) @ Id, Vgs：5.3mOhm @ 300A, 18V
Vgs(th) (Max) @ Id：5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs：1170nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：36100pF @ 1.2kV
Power - Max：-
Operating Temperature：-40°C ~ 175°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-62MMHB
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF4MR20KM1HPHPSA1

FF4MR20KM1HPHPSA1

FET, MOSFET Arrays Overview

The FF4MR20KM1HPHPSA1 is a half-bridge module from Infineon's 62 mm C-Series, utilizing CoolSiC™ Trench MOSFET technology. It features a drain-source voltage (VDSS) of 2000 V and a nominal drain current (IDN) of 300 A, with a repetitive peak current (IDRM) of 600 A. The device incorporates pre-applied thermal interface material and offers low switching losses alongside high current density. Electrical isolation includes a 4 kV AC insulation rating for one minute.

FET, MOSFET Arrays Feature Summary

Incorporates CoolSiC™ Trench MOSFET technology for reduced switching losses and enhanced current density.
Includes pre-applied thermal interface material to simplify assembly and improve thermal performance.
Provides robust electrical isolation with a 4 kV AC insulation rating for one minute.

FET, MOSFET Arrays Applications

UPS systems
DC/DC converters
Solar applications
High-frequency switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix HPHPSA1 against official documentation to confirm exact configuration details. Ensure compliance with industrial qualification standards such as IEC 60747, 60749, and 60068. Confirm storage conditions for modules containing pre-applied thermal interface material according to application notes.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high-voltage handling up to 2000 V and significant current capacity in a compact form factor. Consider the negative temperature coefficient characteristics and gate drive requirements specified in related application notes for optimal performance and reliability.

FET, MOSFET Arrays Part Context

This part belongs to the 62 mm C-Series lineup, designed for modern power electronics. It integrates advanced silicon carbide technology within a standardized package footprint, facilitating integration into various industrial power conversion architectures while maintaining high efficiency.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists for compatible alternatives within the same series or voltage class. Verify pinout compatibility and thermal resistance specifications when considering cross-references.