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FF5MR20KM1HHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF5MR20KM1HHPSA1
- Description：MOSFET
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF5MR20KM1HHPSA1
FET, MOSFET Arrays Overview
The FF5MR20KM1HHPSA1 is a 62 mm C-Series module containing CoolSiC Trench MOSFETs. It features a drain-source voltage of 2000 V, a nominal drain current of 200 A, and a repetitive peak drain current of 400 A. The device provides low switching losses and high current density. Electrical isolation includes a 4 kV AC insulation rating for one minute. The module operates within a junction temperature range of -40 °C to 175 °C.
FET, MOSFET Arrays Feature Summary
- Utilizes CoolSiC Trench MOSFET technology for high efficiency
- Provides robust electrical isolation with 4 kV AC insulation
- Designed for high current density applications
- Optimized for low switching energy losses
FET, MOSFET Arrays Applications
- UPS systems
- DC/DC converters
- Solar applications
- High-frequency switching applications
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix HHPSA1 against official Infineon documentation to confirm exact ordering specifications. Ensure compatibility with required mounting torque values and thermal interface materials. Confirm that the industrial qualification meets IEC 60747, 60749, and 60068 standards for the intended deployment environment.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring 2000 V blocking capability and high-frequency operation. Evaluate thermal resistance parameters relative to the heatsink design. Consider the gate charge characteristics when designing the driver circuitry. Verify that the package dimensions align with the mechanical constraints of the target system.
FET, MOSFET Arrays Part Context
This part belongs to the 62 mm C-Series module family from Infineon Technologies. It utilizes silicon carbide (SiC) semiconductor technology rather than standard silicon. The module integrates two MOSFETs in a half-bridge configuration within a standardized industrial package format designed for high-power density implementations.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capabilities, and package footprint. Verify that alternative components meet the same industrial qualification standards.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
