SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF600R17ME4PB11BOSA1 is an EconoDUAL™3 IGBT module featuring Trench/Fieldstop IGBT4 technology and an emitter-controlled diode. It provides a collector-emitter voltage of 1700 V and a continuous DC collector current of 600 A at 50°C baseplate temperature, with a repetitive peak current capability of 1200 A. The module utilizes PressFIT terminals and includes an integrated NTC thermistor for thermal monitoring. Key electrical parameters include a typical saturation voltage of 1.95 V and forward voltage of 1.8 V at 25°C junction temperature. It operates within a junction temperature range of -40°C to 150°C under switching conditions.
Verify the specific ordering suffix against official Infineon documentation to confirm terminal type and packaging configuration. Ensure compatibility with recommended gate drivers listed in the manufacturer's guide. Confirm RoHS compliance status and industrial qualification standards before finalizing procurement specifications.
Select this component for medium-to-high power applications requiring robust mechanical design and high current handling. Evaluate thermal resistance values relative to the heatsink design. Verify that the operating voltage and current ratings align with the system's maximum load requirements and transient conditions.
This part belongs to the Infineon EconoDUAL™3 product family, designed for medium-power applications. It integrates Trenchstop IGBT4 technology to achieve high power density and reliable performance in industrial environments. The module is qualified according to IEC standards for industrial applications.
Check for updated revisions within the same series or alternative modules with similar voltage and current ratings. Ensure pinout compatibility and thermal characteristics match the existing design constraints when considering substitutes.