FF600R17ME4PBOSA1

FF600R17ME4PBOSA1

$189.14
  • Description:IGBT MODULE VCES 1200V 600A
  • Series:EconoDUAL™ 3

SKU:8ca35fca8074 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE VCES 1200V 600A
  • Series:EconoDUAL™ 3
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Half Bridge Inverter
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 600A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):600 A
  • Power - Max:-
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:48 nF @ 25 V

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FF600R17ME4PBOSA1

Overview

The FF600R17ME4PBOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and an emitter-controlled diode. It features a pre-applied thermal interface material within the EconoDUAL™3 housing. The device supports a collector-emitter voltage of 1700 V with a nominal continuous DC collector current of 600 A at 50°C baseplate temperature. Key electrical parameters include a typical saturation voltage of 1.95 V at 25°C and a forward voltage of 1.80 V for the integrated diode. The module incorporates an NTC thermistor rated at 5 kΩ at 25°C for thermal monitoring.

Feature Summary

  • Pre-applied thermal interface material simplifies assembly and ensures reliable thermal contact
  • Isolated copper base plate provides basic insulation class protection
  • Positive temperature coefficient of saturation voltage facilitates parallel operation
  • Integrated NTC thermistor enables precise junction temperature monitoring

Applications

  • High-power industrial converters
  • Wind turbine generator systems
  • Traction drive inverters

Procurement Notes

Verify the specific ordering suffix BOSA1 to confirm packaging format and RoHS compliance status. Ensure that the gate driver selection aligns with the internal gate resistance and required switching speed specifications. Confirm that the mounting torque adheres strictly to the application note guidelines to maintain mechanical integrity and thermal performance.

Selection Notes

Select this component for applications requiring high current density and robust short-circuit withstand capability up to 2300 A. Evaluate the thermal resistance values in conjunction with the heatsink design to ensure the maximum operating junction temperature remains within limits. Consider the stray inductance value when designing the DC link layout to minimize voltage overshoot during switching transitions.

Part Context

This module belongs to the Infineon EconoDUAL™3 family, designed for high power density applications. It represents the IGBT4-E4 generation, offering improved switching characteristics compared to previous iterations. The standard housing allows for compatibility with existing cooling solutions and PCB layouts common in industrial power electronics designs.

Replacement Considerations

Direct replacements within the same voltage and current class include the FF600R17ME4 without the P suffix, though the pre-applied TIM may differ. Verify pinout compatibility and thermal resistance specifications before substituting other half-bridge modules in the 1700V series.

FF600R17ME4PBOSA1FF600R17ME4PBOSA1
$189.14
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