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Product Detailed Parameters
- Description：IGBT MODULE 1700V 650A
- Series：PrimePACK™2
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 650A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：650 A
- Power - Max：-
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：54 nF @ 25 V
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Overview
The FF650R17IE4DPB2BOSA1 is a dual IGBT module utilizing Trench/Fieldstop IGBT4 technology with an Emitter Controlled Diode. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 650 A at TH = 60°C. The repetitive peak collector current (ICRM) reaches 1300 A for 1 ms pulses. At Tvj = 25°C, the typical collector-emitter saturation voltage (VCEsat) is 2.00 V, rising to 2.80 V at Tvj = 150°C. The diode forward voltage (VF) is typically 1.70 V at 25°C. Thermal resistance from junction to heatsink is 56.0 K/kW per IGBT and 87.4 K/kW per diode. The module includes a pre-applied thermal interface material and an NTC thermistor rated at 5.00 kΩ.
Feature Summary
- High short-circuit capability and surge current robustness
- Enlarged diode optimized for regenerative operation
- Pre-applied thermal interface material for simplified assembly
- Integrated NTC thermistor for internal temperature monitoring
Applications
- Traction drives
- Wind turbines
Procurement Notes
Verify the specific ordering suffix B2BOSA1 against official Infineon documentation to confirm exact manufacturing specifications. Ensure compliance with RoHS standards and check for any updated application notes regarding storage and transport procedures for modules containing pre-applied thermal interface materials.
Selection Notes
Select this component for high-power applications requiring robust short-circuit handling and high current density. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Verify that the operating junction temperature range of -40°C to 150°C aligns with the system's thermal management design and insulation requirements.
Part Context
This part belongs to the PrimePACK™2 series, designed for industrial and traction applications. It integrates Trench/Fieldstop IGBT4 technology with an emitter-controlled diode to enhance performance in inverter circuits. The module provides high isolation voltage and mechanical durability suitable for demanding power conversion environments.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the PrimePACK™2 footprint, electrical ratings, and thermal characteristics.
