FF6MR12KM1BOSA1

FET, MOSFET Arrays Overview

The FF6MR12KM1BOSA1 is a CoolSiC MOSFET half-bridge module from Infineon Technologies, designed for high-efficiency power conversion. It features a 1200 V drain-source breakdown voltage and a continuous drain current of 250 A at case temperature. The device utilizes N-channel Silicon Carbide technology with a low on-resistance to minimize conduction losses. Packaged in a 62 mm chassis mount format, it supports screw mounting for robust thermal management. Operating within a temperature range of -40°C to +175°C, this component integrates advanced switching characteristics suitable for demanding industrial applications.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Carbide (SiC) MOSFET technology for superior thermal performance and efficiency
• Integrates negative temperature coefficient (NTC) temperature sensor for precise thermal monitoring
• Employs press-fit contact technology to ensure reliable mechanical connection and heat dissipation
• Configured as a half-bridge module to simplify circuit design and reduce footprint

FET, MOSFET Arrays Applications

• Uninterruptible Power Supplies (UPS)
• Energy Storage Systems (ESS)
• Solar Inverters
• Electric Vehicle (EV) Chargers

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix BOSA1 against the official Infineon datasheet to confirm exact electrical parameters and package configuration. Ensure compatibility with existing cooling solutions due to the 62 mm form factor. Confirm that the press-fit termination style matches the PCB or busbar design requirements. Check for end-of-life status updates as distribution channels may list obsolescence notices. Validate RoHS compliance documentation prior to final integration into production assemblies.

FET, MOSFET Arrays Selection Notes

Select this module when high-frequency switching and reduced system size are critical priorities. The SiC material enables operation at higher temperatures compared to silicon alternatives, potentially simplifying heatsink requirements. Consider the 1200 V rating for medium-voltage DC link applications. Evaluate the 250 A current capacity against peak load demands to ensure adequate safety margins. Assess the ease of assembly offered by the standardized 62 mm package dimensions for rapid prototyping.

FET, MOSFET Arrays Part Context

This component belongs to the EasyPAC CoolSiC family, representing Infineon's hybrid packaging approach combining SiC dies with optimized thermal interfaces. It targets the growing market for compact, high-power density converters. The module serves as a core switching element in modern power electronics, replacing traditional silicon IGBTs in applications requiring lower switching losses and higher efficiency.

FET, MOSFET Arrays Replacement Considerations

The related part number FF6MR12KM1BOSA1 is listed as End of Life and scheduled for obsolescence. Engineers should consult Infineon for recommended successor modules within the M1H series, such as the FF6MR12W2M1HB70BPSA1, ensuring pinout and thermal interface compatibility before substitution.