FF6MR12KM1HPHPSA1

$183.80

Description：MOSFET
Series：-

SKU:54a8071d747e Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF6MR12KM1HPHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF6MR12KM1HPHPSA1

Description：MOSFET
Series：-
Mfr：Infineon Technologies
Package：Tray
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF6MR12KM1HPHPSA1

FF6MR12KM1HPHPSA1

FET, MOSFET Arrays Overview

The FF6MR12KM1HPHPSA1 is a 62 mm C-Series module containing CoolSiC Trench MOSFETs. It features a drain-source voltage of 1200 V, a continuous DC drain current of 175 A at 175 °C junction temperature, and a repetitive peak drain current of 360 A. The module includes pre-applied thermal interface material and provides 4 kV AC insulation. Stray inductance is 20 nH, with a junction-to-heat sink thermal resistance of 0.227 K/W per switch.

FET, MOSFET Arrays Feature Summary

Incorporates CoolSiC Trench MOSFET technology for high current density and low switching losses
Includes pre-applied thermal interface material to simplify assembly
Provides 4 kV AC isolation between terminals and heatsink

FET, MOSFET Arrays Applications

Uninterruptible Power Supply (UPS) systems
Solar applications
Energy storage systems
DC chargers for electric vehicles

FET, MOSFET Arrays Procurement Notes

Verify the component against the official Infineon datasheet IFX-ABG972-001. Confirm that the ordering suffix HPSA1 corresponds to the specific package and marking requirements. Ensure compliance with industrial qualification standards IEC 60747, 60749, and 60068 before integration into designs.

FET, MOSFET Arrays Selection Notes

Select this module for high-frequency switching applications requiring robust thermal performance. The integrated thermal interface material reduces assembly complexity. Designers must consider gate drive voltage windows and overload conditions as specified in application notes AN 2018-09 and AN 2021-13 to ensure long-term reliability.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon CoolSiC M1H series within the 62 mm C-Series module family. It utilizes silicon carbide technology to achieve superior power density compared to traditional silicon devices. The module is designed for industrial quality grades and supports operation up to a maximum junction temperature of 175 °C.

FET, MOSFET Arrays Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same series. Verify electrical ratings and thermal characteristics when substituting components to maintain system integrity.