FF6MR12KM1PHOSA1

FET, MOSFET Arrays Overview

The FF6MR12KM1PHOSA1 is a CoolSiC MOSFET half-bridge module from the CIPOS Mini IPM series. It features a 1.2 kV drain-source breakdown voltage and a continuous drain current of 250 A. The device has a typical on-resistance of 5.81 mOhms at 25°C. It operates within a temperature range of -40°C to +150°C, with gate-source voltage limits of -10 V and +20 V. The threshold voltage is typically 3.45 V. Rise and fall times are 33.7 ns and 43.9 ns respectively. The module uses screw mounting in a 62 mm package.

FET, MOSFET Arrays Feature Summary

• Utilizes silicon carbide (SiC) technology for high-efficiency power switching.
• Integrated thermal interface material (TIM) for improved heat dissipation.
• Designed for industrial quality standards ensuring reliability in demanding environments.

FET, MOSFET Arrays Applications

• Uninterruptible Power Supplies (UPS)
• Energy Storage Systems (ESS)
• Solar Inverters
• Electric Vehicle Chargers

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix PHOSA1 against official Infineon documentation to confirm exact ordering specifications. Confirm availability status as this component may be subject to end-of-life notices or regional distribution restrictions. Ensure compatibility with required gate drive circuits and thermal management solutions before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high voltage handling and low conduction losses. The 1.2 kV rating suits systems operating at lower DC bus voltages where robustness is needed. Consider the 250 A current capacity for medium-power designs. Verify that the half-bridge topology aligns with the intended circuit configuration and that the 62 mm package fits the mechanical constraints.

FET, MOSFET Arrays Part Context

This component belongs to the CIPOS Mini IPM family, which integrates power switches into compact modules. It is part of the broader CoolSiC portfolio, leveraging silicon carbide semiconductors for superior performance compared to traditional silicon devices. The M1H designation indicates specific generation characteristics within the CoolSiC line.

FET, MOSFET Arrays Replacement Considerations

Check for direct substitutes within the FF6MR12KM1 series. Verify pinout and electrical parameters match exactly when considering alternative part numbers. Consult official replacement guides for any discontinued variants.