FET, MOSFET Arrays FF6MR12W2M1B11BOMA1 product image

FF6MR12W2M1B11BOMA1

  • Description:MOSFET 2N-CH 1200V AG-EASY2BM-2
  • Series:CoolSiC™+

SKU:94826d2285a1 Category: Brand:

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FF6MR12W2M1B11BOMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V AG-EASY2BM-2. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF6MR12W2M1B11BOMA1

  • Description:MOSFET 2N-CH 1200V AG-EASY2BM-2
  • Series:CoolSiC™+
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:200A (Tj)
  • Rds On (Max) @ Id, Vgs:5.63mOhm @ 200A, 15V
  • Vgs(th) (Max) @ Id:5.55V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs:496nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds:14700pF @ 800V
  • Power - Max:-
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-EASY2BM-2
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FF6MR12W2M1B11BOMA1

FF6MR12W2M1B11BOMA1

FET, MOSFET Arrays Overview

The FF6MR12W2M1B11BOMA1 is a CoolSiC MOSFET module from Infineon Technologies, utilizing Silicon Carbide (SiC) technology. It features a dual N-Channel configuration within the EasyDUAL PressFIT package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 200 A. The on-resistance is specified at 5.63 mOhms, with gate-source voltage limits ranging from -10 V to +20 V. The threshold voltage is 3.45 V. Operating temperatures span from -40 C to +150 C. Switching characteristics include a fall time of 30 ns and a rise time of 18.7 ns.

FET, MOSFET Arrays Feature Summary

  • Utilizes Silicon Carbide (SiC) semiconductor technology for high-performance power switching.
  • Features a dual N-Channel configuration integrated into a single module.
  • Designed for press-fit installation to facilitate automated assembly and secure mounting.
  • Operates reliably across an extended temperature range up to 150 C junction temperature.

FET, MOSFET Arrays Applications

  • Uninterruptible Power Supplies (UPS)
  • Energy Storage Systems (ESS)
  • Solar Inverters
  • Electric Vehicle (EV) Chargers

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check end-of-life notices as availability may be limited. Ensure handling procedures align with ESD protection standards for sensitive SiC devices. Validate package integrity upon receipt to prevent damage to press-fit contacts.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high voltage tolerance and low conduction losses. Consider the 1.2 kV rating for systems operating near this potential. Evaluate thermal management requirements given the 200 A current capacity. Verify compatibility with press-fit mounting infrastructure. Assess switching speed requirements against the 30 ns fall time specification.

FET, MOSFET Arrays Part Context

This component belongs to the CoolSiC Module family, specifically the EasyDUAL series. It represents Infineon's integration of wide-bandgap SiC technology into standardized packaging formats. The module design aims to simplify system implementation by combining multiple switches in a robust enclosure suitable for industrial power electronics.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Consult official replacement guides for cross-referencing similar CoolSiC modules with compatible pinouts and electrical ratings.

FF6MR12W2M1B11BOMA1FF6MR12W2M1B11BOMA1

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