FF6MR12W2M1B70BPSA1

FET, MOSFET Arrays Overview

The FF6MR12W2M1HB70BPSA1 is a CoolSiC MOSFET half-bridge module from Infineon Technologies. It features N-channel silicon carbide technology with a 1200 V drain-source breakdown voltage and a continuous drain current of 200 A. The device has a typical on-resistance of 5.63 mOhms and operates within a temperature range of -40°C to +175°C. Key switching parameters include a turn-on delay of 20.4 ns, turn-off delay of 62.6 ns, rise time of 18.7 ns, and fall time of 30 ns. The module utilizes screw mounting in a 106.4 mm x 61.4 mm x 30.5 mm EasyDUAL package.

FET, MOSFET Arrays Feature Summary

• Integrates two N-channel CoolSiC MOSFETs in a single half-bridge configuration for efficient power conversion.
• Utilizes silicon carbide semiconductor technology to enable high-temperature operation up to 175°C junction temperature.
• Features the EasyDUAL packaging design which supports direct screw mounting for robust mechanical integration.

FET, MOSFET Arrays Applications

• Uninterruptible Power Supplies (UPS)
• Energy Storage Systems (ESS)
• Solar Inverters
• Electric Vehicle Chargers

FET, MOSFET Arrays Procurement Notes

Verify the complete part number against official documentation, as the input model lacks the 'H' character present in the verified datasheet identifier FF6MR12W2M1HB70BPSA1. Confirm that the requested component matches the specific M1H series specifications and EasyDUAL package dimensions before procurement to ensure compatibility with existing thermal and mechanical designs.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high-frequency switching and elevated thermal performance. The low on-resistance and fast switching times support compact magnetic component sizing. Ensure gate drive circuits are compatible with the specified threshold and voltage limits. Verify that the system's thermal management can handle the power dissipation characteristics at the intended operating junction temperatures.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon CoolSiC G1 MOSFET module family, specifically the M1H series. It is designed as a discrete power module for industrial and automotive power electronics. The EasyDUAL form factor allows for standardized mounting solutions within larger inverter or converter assemblies used in renewable energy and electric mobility sectors.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 1200V/200A rating and EasyDUAL package footprint. Consider other M1H series variants with adjusted current ratings if electrical requirements differ. Verify pinout compatibility and thermal resistance values when substituting with modules from different manufacturers or generation families.