FF6MR12W2M1HPB11BPSA1

$125.31

Description：MOSFET 2N-CH 1200V 200A MODULE
Series：HEXFET®

SKU:49eada1458e4 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF6MR12W2M1HPB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V 200A MODULE. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF6MR12W2M1HPB11BPSA1

Description：MOSFET 2N-CH 1200V 200A MODULE
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：200A (Tj)
Rds On (Max) @ Id, Vgs：5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id：5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs：496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：14700pF @ 800V
Power - Max：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF6MR12W2M1HPB11BPSA1

FF6MR12W2M1HPB11BPSA1

FET, MOSFET Arrays Overview

The FF6MR12W2M1HPB11BPSA1 is a CoolSiC Trench MOSFET half-bridge module rated at 1200 V. It supports a continuous DC drain current of 150 A and a repetitive peak current of 300 A. The on-state resistance is typically 5.4 mΩ at 25°C. Operating junction temperature ranges from -40°C to 175°C. Key electrical parameters include a gate threshold voltage of 3.45 V to 5.15 V, turn-on delay of 38 ns, and fall time of 15 ns. Stray inductance is limited to 8 nH.

FET, MOSFET Arrays Feature Summary

Integrates PressFIT contact technology for rugged mounting without soldering
Includes an integrated NTC temperature sensor for thermal monitoring
Features pre-applied thermal interface material to simplify assembly
Utilizes low-inductive design with integrated mounting clamps

FET, MOSFET Arrays Applications

UPS systems
High-frequency switching applications
DC/DC converters
Solar applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm mechanical variations or packaging details. Confirm that the component meets industrial qualification standards per IEC 60747, 60749, and 60068. Ensure compatibility with recommended gate drivers before procurement.

FET, MOSFET Arrays Selection Notes

Select this module for high-current density applications requiring low switching losses. Verify that the system can accommodate the 175°C maximum junction temperature. Ensure the application utilizes the recommended gate voltages of 15V to 18V for optimal performance and longevity.

FET, MOSFET Arrays Part Context

This component belongs to the EasyDUAL module family utilizing CoolSiC Trench MOSFET technology. It is designed for industrial power conversion where high efficiency and robust mounting are required. The module integrates both the semiconductor die and thermal management features into a single unit.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon substitution guides for compatible alternatives. Verify pinout and thermal characteristics when considering cross-references.