FF6MR20W2M1HB70BPSA1

FET, MOSFET Arrays Overview

The FF6MR20W2M1HB70BPSA1 is a CoolSiC MOSFET half-bridge module from Infineon Technologies, utilizing silicon carbide technology. It features a 2000 V drain-source breakdown voltage and supports continuous currents up to 160 A at a junction temperature of 175°C. The device exhibits a maximum on-resistance of 8.1 mΩ at 160 A and 18 V gate drive. Key switching parameters include a typical turn-on delay of 109 ns and turn-off delay of 147 ns. The module operates within a temperature range of -40°C to +175°C and utilizes screw mount installation.

FET, MOSFET Arrays Feature Summary

• Utilizes CoolSiC trench gate technology for high-efficiency power conversion
• Integrated half-bridge configuration with dual N-channel architecture
• Designed for high thermal stability with operation up to 175°C junction temperature
• Compatible with isolated gate drivers such as the 1ED3890MC12M

FET, MOSFET Arrays Applications

• Electric vehicle charging systems
• Energy storage system power factor correction (ESS PFC)
• DC-DC converters
• Solar inverter applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix B70 against official datasheets to confirm package and tape/reel specifications. Confirm that the ordering code matches the exact electrical ratings required for the target application. Cross-reference the manufacturer part number with authorized distributors to ensure authenticity and traceability. Check for any recent lifecycle status updates or obsolescence notices directly from Infineon before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high voltage blocking capability and low conduction losses in high-frequency environments. Ensure the gate driver circuitry supports the specified negative and positive gate voltage limits. Verify that the thermal management solution can handle the power dissipation at the intended operating current. Consider the switching speed characteristics when designing snubber circuits or managing electromagnetic interference in the layout.

FET, MOSFET Arrays Part Context

This module belongs to the EasyDUAL CoolSiC family, designed for compact and efficient power electronics. It integrates two SiC MOSFETs in a single screw-mount package to reduce parasitic inductances. The M1H series designation indicates specific internal cell technology optimized for balancing switching performance and robustness in industrial and automotive-grade applications.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon documentation for qualified alternative part numbers within the same voltage and current class. Verify pinout compatibility and thermal interface dimensions before substituting. Ensure that any replacement maintains the required 2000 V rating and switching characteristics to preserve system safety and efficiency.