FF7MR12W1M1HB17BPSA1

FET, MOSFET Arrays Overview

The FF7MR12W1M1HB17BPSA1 is a dual N-channel Silicon Carbide (SiC) MOSFET module from Infineon Technologies, utilizing the CoolSiC M1H technology. It features a 1.2 kV drain-source breakdown voltage and a continuous drain current of 105 A. The device exhibits a low on-resistance of 5.8 mOhms at 25°C. It operates within a temperature range of -40°C to +175°C and utilizes a press-fit installation style in an EasyPACK 1B package measuring 48 mm x 33.8 mm x 12 mm.

FET, MOSFET Arrays Feature Summary

• Dual configuration for half-bridge applications
• High thermal stability with extended operating temperature range
• Low conduction losses via optimized SiC M1H technology
• Robust mechanical connection through press-fit mounting

FET, MOSFET Arrays Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters
• Electric vehicle charging stations

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix BPSA1 against official Infineon documentation to confirm exact manufacturing lot specifications and compliance status. Ensure that the ordering code matches the required datasheet revision. Confirm compatibility with standard EASY packaging handling procedures during assembly. Cross-reference the component marking with the manufacturer's latest release notes to validate authenticity and traceability before procurement.

FET, MOSFET Arrays Selection Notes

Select this module for designs requiring high efficiency and compact form factors in medium-power applications. The dual configuration supports half-bridge topologies effectively. Evaluate the thermal management requirements based on the specified power dissipation and junction temperature limits. Consider the press-fit mounting method for the PCB design to ensure reliable mechanical and electrical connections without soldering complexities.

FET, MOSFET Arrays Part Context

This component belongs to Infineon's CoolSiC MOSFET family, specifically the M1H generation designed for 1200 V applications. It is part of the EasyPACK 1B series, which offers standardized dimensions for easy integration into various power electronic systems. The M1H technology represents an advancement in silicon carbide performance, focusing on reduced switching and conduction losses compared to previous generations.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon substitution guides for direct replacements. Verify pinout compatibility and thermal characteristics when considering alternative part numbers within the same voltage and current ratings.