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Product Detailed Parameters
- Description：IGBT MOD 1200V 1200A 3900W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Bulk
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 800A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：1200 A
- Power - Max：3900 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：57 nF @ 25 V
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Overview
The FF800R12KE3NOSA1 is a silicon IGBT module from the TRENCHSTOP IGBT3 - E3 series, manufactured by Infineon Technologies. It features a dual configuration housed in an IHM130 package with screw mount installation style. The device supports a maximum collector-emitter voltage of 1.2 kV and operates within a junction temperature range of -40°C to +125°C. Key electrical parameters include a continuous collector current of 1.2 kA at 25°C, a maximum power dissipation of 3.9 kW, and a collector-emitter saturation voltage of 1.7 V. The gate-emitter leakage current is specified at 400 nA, with a maximum gate-emitter voltage of 20 V.
Feature Summary
- Utilizes TRENCHSTOP IGBT3 technology for optimized switching performance
- Dual configuration design for high-current applications
- Robust thermal management capabilities up to 3.9 kW power dissipation
Applications
- Industrial motor drives
- Uninterruptible Power Supplies (UPS)
- Welding equipment
Procurement Notes
This component has reached end-of-life status and is no longer in production. Verification of availability should focus on existing stock or authorized distributors holding legacy inventory. Buyers must confirm the authenticity of the part number FF800R12KE3NOSA1 and check for any specific handling requirements associated with discontinued semiconductor devices before acquisition.
Selection Notes
Designers requiring this specific rating should consider the FF900R12IE4BOSA1 as a verified alternative. Selection criteria must account for the transition from the older IGBT3 generation to newer technologies, ensuring compatibility with existing thermal interfaces and drive circuits. Verify that the replacement meets the same voltage and current specifications required by the original system design.
Part Context
The FF800R12KE3NOSA1 belongs to the broader FF800R12 family of high-power IGBT modules. It shares technical lineage with other variants like the FF800R12KE3, differing primarily in ordering suffixes which may indicate specific testing or packaging variations. This module represents a segment of Infineon's industrial power solutions designed for robust operation in demanding electrical environments.
Replacement Considerations
The FF900R12IE4BOSA1 is listed as a similar substitute part. Engineers should verify pinout compatibility and thermal characteristics when transitioning to this newer generation device.
