FF800R12KE7HPSA1

Overview

The FF800R12KE7HPSA1 is a 62 mm C-Series IGBT module featuring TRENCHSTOP™ IGBT7 technology and an emitter-controlled diode. It provides a collector-emitter voltage of 1200 V, a nominal continuous DC collector current of 800 A at 90 °C case temperature, and a repetitive peak current of 1600 A. The saturation voltage is typically 1.50 V at 25 °C and 1.75 V at 175 °C. Operating junction temperatures range from -40 °C to +175 °C. The module includes an isolated copper base plate with 4 kV AC insulation and high creepage distances.

Feature Summary

• TRENCHSTOP™ IGBT7 technology providing positive temperature coefficient for saturation voltage
• High power density within the standard 62 mm C-Series housing
• Isolated base plate with comparative tracking index exceeding 400
• Qualified for industrial applications according to IEC 60747, 60749, and 60068 standards

Applications

• Three-level inverter applications
• Commercial agriculture vehicles (CAV)
• High-power converters
• Motor drives and servo drives
• Solar photovoltaic systems and UPS

Procurement Notes

Verify component authenticity by checking the Data Matrix barcode against Infineon's official traceability records. Confirm that the module label matches the specific part number FF800R12KE7HPSA1. Ensure storage conditions remain within the specified -40 °C to 125 °C range prior to installation. Review the latest application notes for correct mounting torque specifications to maintain thermal interface integrity.

Selection Notes

Select this module for designs requiring high current handling up to 800 A with low switching losses. Consider the thermal resistance values when designing heatsink solutions for continuous operation. Verify gate drive requirements align with the ±15 V operating voltage. Evaluate the stray inductance of 20 nH for circuit layout optimization to minimize voltage overshoot during switching transitions.

Part Context

This component belongs to the Infineon 62 mm C-Series family, utilizing advanced TRENCHSTOP™ IGBT7 technology. It represents a modern iteration designed for high power density and robust performance in demanding industrial environments. The series supports various topologies including half-bridge configurations for efficient power conversion systems.

Replacement Considerations

Direct substitutes include FF800R12KE7DHPSA1 and FF800R12KE7EHPSA1. Verify pinout compatibility and thermal characteristics before substitution. Ensure the alternative variant meets the specific insulation and mechanical requirements of the existing design.