FF800R17KP4B2NOSA2

FF800R17KP4B2NOSA2

$810.56
  • Description:IGBT MODULE 1700V 800A
  • Series:IHM-A

SKU:ab33d9b1a4a0 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 1700V 800A
  • Series:IHM-A
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:2 Independent
  • Vce(on) (Max) @ Vge, Ic:-
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:A-IHV130-3
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):1200 A
  • Power - Max:1200 W
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:65 nF @ 25 V

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FF800R17KP4B2NOSA2

Overview

The FF800R17KP4B2NOSA2 is an IHM-A IGBT module featuring Trench/Fieldstop IGBT4 technology and Emitter Controlled 3 diodes. It has a collector-emitter voltage (VCES) of 1700 V, continuous DC collector current (ICDC) of 800 A at TC=80°C, and repetitive peak collector current (ICRM) of 1600 A. The maximum junction temperature (Tvj op) is 150°C. Key electrical parameters include a typical VCEsat of 2.10 V at Tvj=125°C and 800 A, gate charge (QG) of 8.30 µC, input capacitance (Cies) of 65.0 nF, and stray inductance (LsCE) of 20 nH. Thermal resistance from junction to case is 25.7 K/kW for the IGBT and 36.8 K/kW for the diode.

Feature Summary

  • Utilizes Trench/Fieldstop IGBT4 technology with Emitter Controlled 3 diodes for low saturation voltage.
  • Features an AlSiC base plate to provide increased thermal cycling capability and high power density.
  • Includes an enlarged diode specifically designed to support regenerative operation.
  • Offers extended operating junction temperature up to 150°C.

Applications

  • High-power converters
  • Medium-voltage converters
  • Motor drives
  • Traction drives
  • Wind turbines

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to ensure correct configuration. Confirm that the component matches the specific datasheet version required for your design. Check for any updated application notes regarding mounting torque and thermal interface material specifications before finalizing procurement.

Selection Notes

Select this module for applications requiring high power density and robust thermal cycling performance. Ensure the cooling system can maintain the case temperature within limits to support the 800 A continuous current rating. Verify that the drive circuitry provides the specified ±15 V gate voltage and appropriate resistors for the switching losses at 900 V bus voltage.

Part Context

This component belongs to the IHM-A series of modules manufactured by Infineon Technologies. It integrates advanced IGBT4 trench field-stop technology paired with emitter-controlled diodes. The package utilizes an aluminum silicon carbide (AlSiC) base plate to enhance mechanical stability and thermal management under high power conditions.

Replacement Considerations

FF800R17KF6CB2NOSA2 is listed as a direct replacement option.

FAQ

What is the maximum repetitive peak collector current?

The maximum repetitive peak collector current (ICRM) is 1600 A for a pulse duration of 1 ms.

What is the isolation test voltage of the module?

The module supports an isolation test voltage (VISOL) of 4.0 kV RMS for 1 minute at 50 Hz.

What is the recommended mounting torque for M6 screws?

The recommended mounting torque for M6 screws is between 4.25 Nm and 5.75 Nm.

FF800R17KP4B2NOSA2FF800R17KP4B2NOSA2
$810.56
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