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The FF800R17KP4B2NOSA2 is an IHM-A IGBT module featuring Trench/Fieldstop IGBT4 technology and Emitter Controlled 3 diodes. It has a collector-emitter voltage (VCES) of 1700 V, continuous DC collector current (ICDC) of 800 A at TC=80°C, and repetitive peak collector current (ICRM) of 1600 A. The maximum junction temperature (Tvj op) is 150°C. Key electrical parameters include a typical VCEsat of 2.10 V at Tvj=125°C and 800 A, gate charge (QG) of 8.30 µC, input capacitance (Cies) of 65.0 nF, and stray inductance (LsCE) of 20 nH. Thermal resistance from junction to case is 25.7 K/kW for the IGBT and 36.8 K/kW for the diode.
Verify the exact ordering suffix against official Infineon documentation to ensure correct configuration. Confirm that the component matches the specific datasheet version required for your design. Check for any updated application notes regarding mounting torque and thermal interface material specifications before finalizing procurement.
Select this module for applications requiring high power density and robust thermal cycling performance. Ensure the cooling system can maintain the case temperature within limits to support the 800 A continuous current rating. Verify that the drive circuitry provides the specified ±15 V gate voltage and appropriate resistors for the switching losses at 900 V bus voltage.
This component belongs to the IHM-A series of modules manufactured by Infineon Technologies. It integrates advanced IGBT4 trench field-stop technology paired with emitter-controlled diodes. The package utilizes an aluminum silicon carbide (AlSiC) base plate to enhance mechanical stability and thermal management under high power conditions.
FF800R17KF6CB2NOSA2 is listed as a direct replacement option.
The maximum repetitive peak collector current (ICRM) is 1600 A for a pulse duration of 1 ms.
The module supports an isolation test voltage (VISOL) of 4.0 kV RMS for 1 minute at 50 Hz.
The recommended mounting torque for M6 screws is between 4.25 Nm and 5.75 Nm.