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FF8MR12W1M1HB70BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF8MR12W1M1HB70BPSA1
- Description：MOSFET
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF8MR12W1M1HB70BPSA1
FET, MOSFET Arrays Overview
The FF8MR12W1M1H_B70 is an EasyDUAL module featuring CoolSiC Trench MOSFET technology with a 1200 V drain-source voltage rating. It supports a continuous DC drain current of 100 A and a repetitive peak current of 200 A at a junction temperature of 175 °C. The device utilizes PressFIT contact technology and includes an integrated NTC temperature sensor for thermal monitoring. Key electrical characteristics include a typical on-resistance of 8.1 mΩ at 25 °C and low stray inductance of 9 nH, designed for high-frequency switching applications.
FET, MOSFET Arrays Feature Summary
- Utilizes CoolSiC Trench MOSFET technology for enhanced switching performance
- Incorporates PressFIT contact technology for secure mechanical connection
- Features an integrated NTC thermistor for precise temperature monitoring
- Designed with low inductive structure to minimize switching losses
FET, MOSFET Arrays Applications
- High-frequency switching applications
- DC/DC converters
- Uninterruptible Power Supply (UPS) systems
- DC chargers for electric vehicles
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix B70 against official Infineon documentation to confirm package type and terminal configuration. Ensure compatibility with IEC 60747, 60749, and 60068 standards for industrial validation. Confirm that the application design accounts for the preliminary status of the datasheet revision 0.30 and adheres to recommended gate voltage guidelines for long-term reliability.
FET, MOSFET Arrays Selection Notes
Select this module for designs requiring high efficiency and compact form factors in power conversion systems. Consider the 175 °C junction temperature capability for robust thermal management. Evaluate the 1200 V rating against system voltage requirements and transient conditions. Verify that the PressFIT mounting method aligns with the target PCB assembly process and mechanical constraints.
FET, MOSFET Arrays Part Context
This component belongs to the Infineon EasyDUAL family, which integrates power semiconductors in a single module housing. The CoolSiC series specifically employs silicon carbide trench MOSFETs to achieve superior performance compared to traditional silicon devices. The B70 suffix denotes specific packaging and terminal variations within this product line.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the 1200 V rating, 100 A continuous current, and EasyDUAL package dimensions. Verify that alternative components support similar switching frequencies and thermal resistance characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
