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The FF900R12IP4PBOSA1 is a dual IGBT module from Infineon Technologies, part of the Trenchstop IGBT4 - P4 series. It features a half-bridge configuration within a PrimePACK™ 2 housing. The device supports a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 900 A at 25°C. Typical saturation voltages are 1.7 V for the IGBT and 1.65 V for the diode at 25°C. It operates within a junction temperature range of -40°C to +150°C and utilizes screw mount installation.
Verify the specific suffix PBOSA1 against official Infineon documentation to confirm RoHS compliance status and internal revision details. Ensure the ordering code matches the exact package variant required for the target assembly process. Cross-reference the datasheet version to validate electrical parameters before final procurement decisions.
Select this component for applications requiring high current density in a compact footprint. Compare the 1.7 V saturation voltage against system efficiency targets. Verify that the PrimePACK™ 2 dimensions fit the mechanical constraints. Ensure gate drive capabilities match the standard input requirements specified in the technical data.
This module belongs to the FF900R12 family, designed for industrial power conversion. It shares the 900 A rating and 1200 V blocking capability with other variants like FF900R12IE4. The IP4 designation indicates specific trench stop technology improvements over previous generations, offering a balance between conduction losses and switching speed.
Direct substitutes include FF900R12IP4D or FF900R12IP4DBOSA2. Verify pinout compatibility and thermal interface specifications when swapping between these variants. Confirm that the replacement part meets the same industrial qualification standards.