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FFAF15U20DNTU is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY GP 200V 15A TO-3PF. Review the specifications below when checking this part for your BOM.
The FFAF15U20DNTU is a dual common cathode ultrafast recovery power rectifier manufactured by onsemi, originally developed under Fairchild Semiconductor. It utilizes a TO-3PF through-hole package and provides an average forward current of 15 A at a case temperature of 100°C with a peak repetitive reverse voltage of 200 V. The device features a maximum instantaneous forward voltage of 1.2 V at 15 A and 25°C, alongside a non-repetitive peak surge current rating of 150 A. Electrical characteristics include a maximum reverse recovery time of 40 ns and a junction-to-case thermal resistance of 3.1 °C/W.
Verify the specific manufacturer origin, as the component was originally produced by Fairchild Semiconductor prior to its acquisition by onsemi. Confirm that the datasheet revision matches the required specifications for your design. Ensure compliance with the life support policy restrictions if the application involves critical systems. Check for any updated environmental compliance documentation regarding RoHS standards.
Select this component for applications requiring fast switching speeds and low conduction losses. The TO-3PF package offers robust mechanical stability and efficient heat dissipation for high-current scenarios. Consider the 200 V reverse voltage rating when designing circuits with potential voltage spikes. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance.
This component belongs to the FFAF series of ultrafast recovery power rectifiers. The 'DN' suffix indicates the TO-3PF package configuration, while 'TU' typically denotes tube packaging. The series is designed for medium-power applications where rapid switching and low reverse recovery charge are essential for system performance and efficiency.
FFAF15U20DN
The device has a maximum avalanche energy rating of 0.5 mJ.
The maximum instantaneous forward voltage decreases from 1.2 V at 25°C to 1.0 V at 100°C case temperature.
The maximum reverse recovery time is 40 ns when tested at IF=15A and di/dt=200A/µs.
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