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Product Detailed Parameters
- Description：IGBT NPT/TRENCH 1200V 30A TO-3P
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT and Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 15A
- Power - Max：186 W
- Switching Energy：3mJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：15ns/160ns
- Test Condition：600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：330 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The FGA15N120ANTDTU is a 1200V NPT Trench IGBT manufactured by onsemi, housed in a TO-3P package. It features a maximum collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC) of 30 A at 25°C case temperature. The device exhibits a typical saturation voltage (VCE(sat)) of 1.9 V at IC = 15 A and TC = 25°C. Switching performance includes a typical turn-off loss (Eoff) of 0.6 mJ under the same conditions. Maximum power dissipation is rated at 186 W at 25°C and 74 W at 100°C. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Utilizes proprietary trench design and advanced NPT technology for superior conduction and switching performance.
- Features positive temperature coefficient characteristics that facilitate easy parallel operation.
- Provides extremely enhanced avalanche capability for robust operation under abnormal conditions.
Applications
- Resonant or soft switching applications
- Induction heating systems
- Microwave ovens
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision status as specifications may be updated. Ensure thermal management aligns with derating curves provided in official documentation. Validate package marking against ordering information to prevent counterfeit substitution.
Selection Notes
Select based on required voltage rating and thermal constraints. Evaluate gate resistance values to optimize switching losses versus EMI. Consider case temperature limits when determining continuous current capacity. Verify compatibility with driver circuits regarding gate threshold voltage levels.
Part Context
This component belongs to the FGA15N120ANTD series of 1200V NPT Trench IGBTs originally developed by Fairchild Semiconductor. The 'TU' suffix indicates tube packaging. The device integrates an IGBT switch with a fast recovery diode within a single TO-3P housing.
Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage and current class. Verify switching speed and saturation voltage parameters match application requirements. Ensure thermal resistance characteristics are comparable for existing heatsink designs.
