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The FGA180N30DTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a maximum collector-emitter voltage of 300V and a continuous collector current rating of 180A at 25°C. The device utilizes Trench technology to achieve low conduction losses and high efficiency in switching applications. It is housed in a TO-3P package, designed for flange mounting to facilitate effective thermal management in high-power circuits.
Verify the manufacturer origin, as Fairchild's semiconductor division was acquired by ON Semiconductor. Confirm that the specific part number corresponds to the original Fairchild production run if legacy sourcing is required. Ensure the component meets RoHS compliance standards relevant to the target market.
Select this component for designs requiring a 300V rated IGBT with high current capacity. The TO-3P package necessitates a heatsink interface compatible with its physical dimensions. Evaluate the gate drive requirements against the device's switching characteristics to ensure optimal performance and thermal stability within the system.
This component belongs to the FGA series of high-power IGBTs from Fairchild Semiconductor. It shares the same electrical ratings and package style as the FGA180N33ATTU, differing primarily in the specific voltage breakdown classification. These devices are standard choices for industrial power electronics.
The FGA180N33ATTU is a confirmed substitute with identical current and package specifications but a higher voltage rating.