FGA20N120FTDTU

FGA20N120FTDTU

  • Description:IGBT TRENCH FS 1200V 40A TO-3P
  • Series:-

SKU:fe4c6c8fc6ba Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH FS 1200V 40A TO-3P
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):40 A
  • Current - Collector Pulsed (Icm):60 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 20A
  • Power - Max:298 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:137 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):447 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

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FGA20N120FTDTU

Overview

The FGA20N120FTDTU is a Field Stop trench-gate IGBT manufactured by onsemi, designed for high-efficiency power switching applications. It features an N-channel configuration housed in a TO-3P package with three pins for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 20 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCEsat) of 2.65 V at 50 A. It supports a maximum power dissipation of 349 W and operates within a junction temperature range of -55°C to +175°C. The integrated anti-parallel diode provides a continuous forward current of 20 A.

Feature Summary

  • Field Stop technology reduces switching losses compared to conventional non-punch-through designs.
  • Trench gate architecture ensures low conduction losses and robust short-circuit capability.
  • Integrated fast recovery anti-parallel diode simplifies circuit design for hard-switching topologies.

Applications

  • High-frequency switch-mode power supplies
  • Industrial motor drives and inverters
  • Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix 'FTDTU' against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing PCB footprints for the TO-3P package. Confirm RoHS compliance status if required by local regulations. Validate supplier authenticity to avoid counterfeit components affecting reliability.

Selection Notes

Select this component when a balance between low conduction loss and manageable switching speed is required for 1200 V applications. Consider the thermal resistance of the TO-3P package for heat sink design. Compare VCEsat and switching energy losses against alternative Field Stop devices from other manufacturers for optimal efficiency.

Part Context

This part belongs to onsemi's FGA series of Field Stop IGBTs, which utilize advanced trench gate technology. It serves as a direct replacement for older Fairchild Semiconductor parts in legacy designs, maintaining form, fit, and function while offering improved performance metrics over previous generation non-punch-through devices.

Replacement Considerations

Direct replacements include the FGA20N120ANTDTU. Verify that substitute parts maintain identical pin configurations and thermal specifications before integration into existing hardware layouts.

FGA20N120FTDTUFGA20N120FTDTU

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