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The FGA20N120FTDTU is a Field Stop trench-gate IGBT manufactured by onsemi, designed for high-efficiency power switching applications. It features an N-channel configuration housed in a TO-3P package with three pins for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 20 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCEsat) of 2.65 V at 50 A. It supports a maximum power dissipation of 349 W and operates within a junction temperature range of -55°C to +175°C. The integrated anti-parallel diode provides a continuous forward current of 20 A.
Verify the specific suffix 'FTDTU' against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing PCB footprints for the TO-3P package. Confirm RoHS compliance status if required by local regulations. Validate supplier authenticity to avoid counterfeit components affecting reliability.
Select this component when a balance between low conduction loss and manageable switching speed is required for 1200 V applications. Consider the thermal resistance of the TO-3P package for heat sink design. Compare VCEsat and switching energy losses against alternative Field Stop devices from other manufacturers for optimal efficiency.
This part belongs to onsemi's FGA series of Field Stop IGBTs, which utilize advanced trench gate technology. It serves as a direct replacement for older Fairchild Semiconductor parts in legacy designs, maintaining form, fit, and function while offering improved performance metrics over previous generation non-punch-through devices.
Direct replacements include the FGA20N120ANTDTU. Verify that substitute parts maintain identical pin configurations and thermal specifications before integration into existing hardware layouts.