FGA25N120ANTDTU

Description：IGBT NPT/TRENCH 1200V 50A TO-3P
Series：-

SKU:1f1c95e19b31 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT NPT/TRENCH 1200V 50A TO-3P
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：NPT and Trench
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.65V @ 15V, 50A
Power - Max：312 W
Switching Energy：4.1mJ (on), 960µJ (off)
Input Type：Standard
Gate Charge：200 nC
Td (on/off) @ 25°C：50ns/190ns
Test Condition：600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)：350 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P
Grade：-
Qualification：-

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FGA25N120ANTDTU

Overview

The FGA25N120ANTDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, housed in a TO-3P-3 through-hole package. It features a 1200V collector-emitter voltage rating and supports a continuous collector current of 25A at case temperature, with a maximum pulsed current of 50A. The device exhibits a collector-emitter saturation voltage of 2.65V at 50A and a gate-emitter leakage current of ±250nA. Operating within a junction temperature range of -55°C to +150°C, it dissipates up to 312W of power. The integrated anti-parallel diode provides a forward voltage of 3V at 25A.

Feature Summary

Utilizes Non-Punch Through (NPT) trench technology for enhanced switching performance and high avalanche durability.
Designed for easy parallel operation to support higher current applications.
Optimized for resonant or soft-switching topologies to minimize switching losses.

Applications

Resonant converter circuits
Soft-switching power supplies
Induction heating systems

Procurement Notes

Verify the specific suffix 'DTU' against the official datasheet to confirm the tube packaging configuration. Ensure the component matches the original Fairchild Semiconductor lineage now under onsemi. Confirm RoHS compliance status as per the latest manufacturer documentation before integration into production.

Selection Notes

Select this component when a 1200V blocking capability and 25A continuous current are required in a TO-3P form factor. Consider the 2.65V Vce(sat) at 50A for thermal management calculations. Evaluate the device's suitability for soft-switching environments where its trench technology offers efficiency advantages over standard planar designs.

Part Context

This part belongs to the FGA25N120ANTD series, originally developed by Fairchild Semiconductor before the company's acquisition by onsemi. The series represents a line of robust NPT trench IGBTs designed for medium-power industrial applications requiring high reliability and efficient switching characteristics.

Replacement Considerations

The NGTB25N120FL3WG is a comparable Field Stop IGBT from onsemi offering similar electrical ratings but utilizes a TO-247 package. Verify pinout compatibility and thermal interface requirements when substituting between these distinct package types.