FGA25N120FTD

Description：IGBT TRENCH FS 1200V 50A TO-3P
Series：-

SKU:bbf17c4859e5 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 50A TO-3P
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：75 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 25A
Power - Max：313 W
Switching Energy：340µJ (on), 900µJ (off)
Input Type：Standard
Gate Charge：160 nC
Td (on/off) @ 25°C：48ns/210ns
Test Condition：600V, 25A, 15Ohm, 15V
Reverse Recovery Time (trr)：770 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P
Grade：-
Qualification：-

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FGA25N120FTD

Overview

The FGA25N120FTD is a 1200 V, 25 A Field Stop Trench IGBT manufactured by Fairchild Semiconductor. It features a TO-3PN package with an integrated fast recovery diode. Key electrical parameters include a collector-emitter saturation voltage of 1.6 V at 25 A and 15 V gate drive. The device supports a maximum continuous collector current of 50 A at 25°C case temperature and operates within a junction temperature range of -55°C to +150°C. Maximum power dissipation is rated at 313 W at 25°C case temperature.

Feature Summary

Field Stop Trench Technology for optimized conduction and switching performance
High avalanche ruggedness suitable for parallel operation
Integrated fast recovery free-wheeling diode

Applications

Induction heating systems
Microwave ovens

Procurement Notes

Verify the manufacturer origin, as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm the specific revision status and authenticity through authorized distribution channels to ensure compliance with original technical specifications.

Selection Notes

Select this component for soft-switching applications requiring high input impedance and low saturation voltage. Ensure thermal management accommodates the specified junction-to-case thermal resistance values for both the IGBT and the integrated diode under expected operating loads.

Part Context

This part belongs to the FGA25N120 series of trench IGBTs designed for resonant and soft-switching topologies. It utilizes advanced field stop technology to achieve superior performance compared to standard NPT designs, specifically targeting efficiency improvements in consumer appliance power stages.