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Product Detailed Parameters
- Description：IGBT TRENCH FS 1250V 50A TO-3PN
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1250 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 25A
- Power - Max：250 W
- Switching Energy：1.09mJ (on), 580µJ (off)
- Input Type：Standard
- Gate Charge：204 nC
- Td (on/off) @ 25°C：24ns/502ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PN
- Grade：-
- Qualification：-
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Overview
The FGA25S125P-SN00337 is a single insulated gate bipolar transistor (IGBT) manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It features a field-stop trench technology designed for low conduction and switching losses. The device is housed in an industry-standard TO-247AD package with solderable terminals. Key electrical parameters include a maximum collector-emitter voltage (Vces) of 1200 V and a continuous collector current (Ic) of 25 A at 25°C. Typical saturation voltage (Vce(sat)) is approximately 2.6 V at 50 A. The component supports junction temperatures up to 175°C and includes an integrated anti-parallel fast recovery freewheeling diode.
Feature Summary
- Field-stop trench IGBT structure for optimized efficiency
- Integrated fast recovery freewheeling diode
- Robust short-circuit capability
- High thermal stability
Applications
- Motor drives and inverters
- Switched-mode power supplies (SMPS)
- Induction heating systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the manufacturer marking on the component body, as Fairchild Semiconductor's discrete semiconductor division was acquired by ON Semiconductor. Ensure the datasheet referenced corresponds to the ON Semiconductor version of the FGA25S125P series to confirm pinout compatibility and updated electrical characteristics. Check for specific suffix variations that may indicate different packaging or testing criteria.
Selection Notes
Select this component for applications requiring high voltage blocking and moderate current handling in compact packages. Compare the Vce(sat) and switching energy losses against competitor devices in the 1200V class. Consider the thermal resistance values provided in the datasheet to ensure adequate heatsinking for the intended duty cycle and ambient temperature conditions.
Part Context
This part belongs to the FGA25SxxXP series of field-stop trench IGBTs. The 'SN' suffix typically denotes specific terminal plating or packaging details within the manufacturer's coding system. These devices are widely used in industrial power conversion due to their balance of performance and cost-effectiveness compared to earlier planar technologies.
Replacement Considerations
Direct replacements include the FGA25S125P from ON Semiconductor. Other compatible parts in the same voltage and current class should be evaluated for matching Vce(sat), turn-off time, and package dimensions to ensure mechanical fit.
