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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 60A TO-3PN
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：339 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：208 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：730 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PN
- Grade：-
- Qualification：-
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Overview
The onsemi FGA30N120FTDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Trench Field-Stop technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 60 A. The device operates with a gate-emitter voltage range of ±25 V and exhibits a typical collector-emitter saturation voltage of 2 V at 15 V gate bias and 30 A. Maximum power dissipation is rated at 339 W, supporting high-efficiency switching in thermal management applications.
Feature Summary
- Utilizes Trench Field-Stop technology for optimized switching performance and low conduction losses.
- Designed as a single IGBT module for robust high-voltage power control.
- Capable of handling pulsed collector currents up to 90 A for transient load conditions.
Applications
- Industrial motor drives and inverters
- Switched-mode power supplies (SMPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific ordering suffix 'DTU' corresponds to the required tube packaging configuration. Confirm that the TO-3PN package dimensions align with the target heatsink interface. Ensure the application circuit supports the specified 1200 V blocking capability and 60 A current limits under all operating thermal conditions.
Selection Notes
Select this component when a 1200 V rating is required for high-power isolation. The 60 A continuous current capacity suits moderate-to-high power industrial loads. Consider the 2 V saturation voltage for efficiency calculations in hard-switching topologies. Verify compatibility with standard gate drive voltages within the ±25 V limit.
Part Context
This part belongs to the discrete IGBT category from onsemi, specifically designed for power electronics. It replaces older Fairchild Semiconductor designs following the corporate merger. The TO-3PN package provides a standardized mechanical form factor for through-hole mounting in legacy and new industrial power systems requiring reliable high-voltage switching.
Replacement Considerations
Direct substitutes include other 1200 V, 60 A single IGBTs in TO-3PN packages from manufacturers such as Infineon or Mitsubishi. Verify pinout compatibility and thermal resistance characteristics before substitution. Cross-reference datasheets for matching Vce(sat) and switching speed parameters to ensure circuit performance consistency.
