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Product Detailed Parameters
- Description：IGBT NPT/TRENCH 1000V 50A TO-3P
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT and Trench
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 60A
- Power - Max：156 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：275 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.5 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The onsemi FGA50N100BNTDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features a maximum collector-emitter voltage of 1000 V and a continuous collector current of 50 A. The device is housed in a TO-3P package with three pins, suitable for through-hole mounting. Key electrical parameters include a maximum power dissipation of 156 W, a typical gate charge of 275 nC, and a reverse recovery time of 1.5 µs. It operates within a temperature range from -55°C to +150°C.
Feature Summary
- High-voltage capability with 1000 V blocking rating
- Robust current handling up to 50 A continuous
- Fast switching characteristics with low reverse recovery time
- Standard TO-3P package for efficient thermal management
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Inverter circuits
- Welding equipment
Procurement Notes
Verify the exact suffix 'NTDTU' against the manufacturer's official datasheet to ensure correct pinout and thermal specifications. Confirm that the TO-3P package matches your board layout requirements. Check for any specific handling instructions regarding moisture sensitivity or electrostatic discharge protection during storage and assembly.
Selection Notes
Select this component when a 1000 V IGBT with 50 A capacity is required. Consider the 156 W power dissipation limit and ensure adequate heatsinking. Compare gate charge and switching speed against alternative devices if high-frequency operation is critical. Verify compatibility with standard IGBT driver circuits.
Part Context
This part belongs to onsemi's single IGBT lineup, specifically the UGBT series. It is distinct from MOSFETs and other transistor types listed in the broader catalog. The TO-3P package provides a robust mechanical structure for high-power industrial environments, differentiating it from surface-mount alternatives.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult onsemi's official cross-reference guide for verified replacements.
