FGA6065ADF

Overview

The FGA6065ADF is a single N-channel Field Stop Trench 3rd generation IGBT manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (IC) of 60 A at a case temperature of 100°C, with a maximum rating of 120 A at 25°C. The device operates within a junction temperature range of -55°C to +175°C and has a maximum power dissipation of 306 W at 25°C. Packaged in a TO-3PN through-hole configuration, it exhibits a typical saturation voltage of 1.8 V at IC = 60 A and VGE = 15 V.

Feature Summary

• Adopts Field Stop Trench 3rd generation technology for low on-state resistance and fast switching characteristics.
• Features positive temperature coefficient for easy parallel operation.
• Optimized for high efficiency in various Power Factor Correction topologies.

Applications

• Single Boost PFC topology for home appliances
• Multi-channel Interleaved PFC topology
• PFC Topology for Welders

Procurement Notes

Verify the component status before procurement as the datasheet indicates this product may be obsolete or subject to discontinuance. Confirm that the ordering suffix matches the required specifications, noting that historical Fairchild part numbers with underscores have been updated to dashes in ON Semiconductor systems. Ensure compliance with RoHS standards and validate all operating parameters for the specific application requirements.

Selection Notes

Select this component for applications requiring high current capability and optimized switching performance in Power Factor Correction circuits. Consider the thermal resistance characteristics and the requirement for a gate drive voltage of 15 V for optimal saturation voltage. Evaluate the system's ability to handle the specified pulsed collector current and ensure adequate heat sinking to maintain the junction temperature within the safe operating area limits.

Part Context

This component belongs to the FGA6065ADF series of Field Stop Trench IGBTs originally developed by Fairchild Semiconductor, which is now part of onsemi. The series utilizes advanced trench gate technology to achieve superior efficiency compared to standard planar IGBTs. The TO-3PN package provides robust mechanical stability and low thermal resistance, making it suitable for industrial and consumer power electronics applications.

Replacement Considerations

Check for direct replacements within the same FGA6065ADF series or other 650V Field Stop Trench IGBTs from onsemi. Verify pinout compatibility and electrical parameter equivalence, particularly regarding saturation voltage and switching times, when substituting with similar packages like TO-3PN.

FAQ

What is the maximum junction temperature for the FGA6065ADF?

The maximum junction temperature (TJ) for the FGA6065ADF is 175°C.

Does the FGA6065ADF support parallel operation?

Yes, the device features a positive temperature coefficient, which facilitates easy parallel operation.

What is the typical saturation voltage at rated current?

The typical collector-to-emitter saturation voltage (VCE(sat)) is 1.8 V at IC = 60 A and VGE = 15 V.