ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 60A TO-3PN
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 30A
- Power - Max：176 W
- Switching Energy：960µJ (on), 162µJ (off)
- Input Type：Standard
- Gate Charge：37.4 nC
- Td (on/off) @ 25°C：12ns/42.4ns
- Test Condition：400V, 30A, 6Ohm, 15V
- Reverse Recovery Time (trr)：81 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PN
- Grade：-
- Qualification：-
Download product information
Overview
The FGA6530WDF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi, utilizing Field-Stop (FS) technology. It features a maximum collector-emitter voltage of 650V and a continuous collector current of 60A. The device operates within a junction temperature range of -55°C to +175°C and has a power dissipation rating of 176W. Key electrical parameters include a saturation voltage of 1.8V, gate charge of 37.4nC at 15V, and switching times of 12ns turn-on delay and 42.4ns turn-off delay.
Feature Summary
- Utilizes third-generation Field-Stop IGBT technology for optimized performance in welding applications.
- Features positive temperature coefficient characteristics to facilitate easy parallel operation.
- Supports high reliability with a maximum junction temperature rating of 175°C.
Applications
- Resistance welding equipment
- Industrial motor drives
- Power supply units
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging specifications. Ensure the component source is an authorized distributor to guarantee authenticity. Cross-reference the part number with the latest revision history to account for any updates in testing standards or manufacturing processes before finalizing procurement orders.
Selection Notes
Select this component for applications requiring robust high-current switching capabilities up to 60A. The 650V rating makes it suitable for medium-voltage industrial systems. Consider the TO-3PN package for efficient thermal management and mechanical mounting. Evaluate the low switching losses for efficiency-critical designs where thermal dissipation is a primary constraint.
Part Context
This part belongs to onsemi's discrete IGBT lineup, specifically leveraging Field-Stop architecture. It is designed as a replacement or upgrade for legacy trench-gate devices in industrial power electronics. The TO-3PN package provides a standardized form factor for high-power modules, ensuring compatibility with existing heatsink and mounting infrastructure in heavy-duty electronic assemblies.
Replacement Considerations
Direct substitutes may include other 650V/60A Field-Stop IGBTs from onsemi such as the FGA25N60ANTD or FGA40N65TMD, provided pinout and thermal characteristics match. Verify that alternative parts meet the same VCE(sat) and switching speed requirements for the specific application circuit.
