FGA6540WDF

Overview

The FGA6540WDF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, utilizing Silicon technology and Field Stop Trench architecture. It features a TO-3PN through-hole package with a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 80 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a power dissipation rating of 238 W. Operating within a temperature range of -55°C to +175°C, it includes a gate-emitter leakage current of 400 nA and withstands gate-emitter voltages between -20 V and 20 V.

Feature Summary

• Field Stop Trench technology for optimized switching performance
• High thermal stability with extended operating temperature range
• Robust single configuration in a standard through-hole package

Applications

• Industrial motor drives
• Switched-mode power supplies
• Inverter circuits

Procurement Notes

This component is officially designated as End-of-Life (EOL) by the manufacturer. Distribution channels indicate restricted availability or discontinuation status. Verification of final time buy options or specific obsolescence notifications from onsemi is required before integration into new designs. Sourcing should prioritize official manufacturer channels or authorized distributors with explicit EOL documentation.

Selection Notes

Engineers selecting this IGBT must account for its discontinued status when planning long-term production cycles. The 650 V rating and 80 A current capacity suit medium-power applications requiring reliable switching. Designers should evaluate thermal management capabilities given the 238 W dissipation limit in the TO-3PN package. Alternative components with similar electrical specifications should be identified to ensure supply chain continuity for future manufacturing phases.

Part Context

The FGA6540WDF belongs to onsemi's discrete IGBT portfolio, specifically leveraging Field Stop technology for improved efficiency. It is part of a broader family of silicon-based power transistors designed for industrial and commercial power conversion. The TO-3PN form factor provides mechanical robustness suitable for high-current applications where through-hole mounting is preferred for heat sinking and structural integrity.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, engineers must identify functional equivalents with matching voltage, current, and package specifications. Cross-referencing datasheets for parameters such as Vce(sat), Ic, and thermal resistance is necessary to ensure compatibility in existing circuit designs.