FGA90N30TU

Overview

The FGA90N30TU is a 300 V PDP IGBT manufactured by Fairchild Semiconductor. It features a maximum continuous collector current of 90 A and a power dissipation rating of 219 W. The device utilizes a TO-3P package with three pins for surface mount installation. Key electrical parameters include a maximum collector-emitter voltage of 300 V and a typical on-state voltage characteristic associated with its 90 A rating. The component operates within a junction temperature range from -55 °C to +150 °C, designed for high-power switching applications requiring robust thermal performance and low conduction losses in industrial environments.

Feature Summary

• High current handling capability with a 90 A continuous collector rating
• Robust thermal management suitable for high-power density designs
• Surface mount construction in a TO-3P package for efficient PCB integration

Applications

• Power Discharge Panel (PDP) driver circuits
• Industrial motor control systems
• High-power switching inverters

Part Context

This component belongs to the FGA90N30 series of Insulated Gate Bipolar Transistors produced by Fairchild Semiconductor. The 'TU' suffix typically denotes specific packaging or tape-and-reel configuration variants within the manufacturer's lineup. Fairchild, now part of ON Semiconductor, historically specialized in power discrete solutions, and this device represents their legacy high-voltage IGBT technology designed for demanding power electronics applications.

Replacement Considerations

Verified equivalent part numbers include FGA90N30DTU and FGA90N30D. These variants share identical electrical specifications and pinout configurations. When substituting, verify that the replacement matches the TO-3P package dimensions and thermal characteristics to ensure compatibility with existing heatsinking and mounting infrastructure.