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Product Detailed Parameters
- Description：INSULATED GATE BIPOLAR TRANSISTO
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The FGAF20N60SMD is a Field Stop Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features an N-channel configuration with a built-in Fast Recovery Diode (FRD). The device is housed in a TO-3PF package and supports through-hole mounting. Key electrical parameters include a collector-emitter voltage of 600 V, a continuous collector current of 40 A, and a saturation voltage of 1.9 V at 20 A. Power dissipation is rated at 79 W, with an operating temperature range from -55°C to +175°C.
Feature Summary
- Utilizes Novel Field Stop IGBT technology for high current capability and low conduction losses.
- Integrates a Fast Recovery Diode with a typical reverse recovery time of 50 ns.
- Provides high input impedance and fast switching characteristics suitable for high-speed applications.
Applications
- AC and DC motor controls
- General purpose inverters
- Robotics systems
- Servo controls
Procurement Notes
This component is obsolete and no longer in production. Sourcing should focus on verifying the authenticity of remaining stock from authorized distributors or surplus suppliers. Ensure that any available units are genuine Fairchild products, as counterfeits may exist for discontinued parts. Check datasheet revisions for any specific handling instructions related to the legacy manufacturing process.
Selection Notes
Select this part only if the application requires a 600V, 40A IGBT with integrated FRD in a TO-3PF package. Consider its obsolete status when designing new equipment; alternative modern equivalents from current product lines should be evaluated for long-term supply chain stability. Verify thermal management requirements against the 79 W power dissipation rating.
Part Context
The FGAF20N60SMD belongs to the UFD series of Ultrafast IGBTs designed by Fairchild Semiconductor. This series was engineered to provide low saturation voltage and fast switching speeds for industrial applications. Fairchild Semiconductor has since been acquired by onsemi, which now manages the legacy portfolio. The device represents a specific generation of field-stop technology optimized for efficiency in power conversion circuits.
Replacement Considerations
As the FGAF20N60SMD is obsolete, direct substitutes must be sourced from current Fairchild/onsemi inventories or cross-referenced with compatible modern IGBTs. Potential replacements should match the 600V/40A specifications and TO-3PF form factor. Consult official replacement guides for updated part numbers within the same family.
