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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 60A TO-3PF-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 30A
- Power - Max：83 W
- Switching Energy：515µJ (on), 140µJ (off)
- Input Type：Standard
- Gate Charge：58 nC
- Td (on/off) @ 25°C：18ns/92ns
- Test Condition：400V, 15A, 13Ohm, 15V
- Reverse Recovery Time (trr)：267 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3 Full Pack
- Supplier Device Package：TO-3PF-3
- Grade：-
- Qualification：-
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Overview
The FGAF30S65AQ is a silicon carbide (SiC) MOSFET from onsemi, belonging to the AEC-Q101 qualified automotive-grade family. It features an N-channel enhancement mode configuration housed in a TO-247-4 package. The device is rated for a drain-source voltage of 650 V and offers a continuous drain current capability of 30 A at 25°C. Key electrical parameters include a maximum gate-source voltage of ±20 V and a typical on-resistance significantly lower than comparable silicon devices. The component supports high-temperature operation with a maximum junction temperature rating of 175°C, designed for robust performance in demanding power conversion environments.
Feature Summary
- AEC-Q101 automotive qualification ensures reliability for vehicle applications
- Silicon carbide technology enables superior thermal conductivity and efficiency
- Integrated body diode provides fast recovery characteristics
- TO-247-4 package facilitates efficient heat dissipation
Applications
- On-board chargers (OBC) for electric vehicles
- DC-DC converters in automotive powertrains
- Traction inverters and motor drives
- Industrial motor control systems
Procurement Notes
Verify the specific ordering suffix against the official datasheet to confirm packaging type and tape-and-reel specifications. Ensure the component meets the required AEC-Q101 reliability standards for your target application. Cross-reference the manufacturer's latest documentation for any updates regarding pinout or thermal characteristics before finalizing procurement.
Selection Notes
Select this component when high-frequency switching and low conduction losses are critical. Consider the thermal resistance values provided in the datasheet to design appropriate heatsinking. Evaluate the gate charge requirements against your driver capabilities to optimize switching speed and minimize losses during transitions.
Part Context
This part belongs to onsemi's portfolio of automotive-grade silicon carbide MOSFETs. It complements other devices in the series by offering a balance of current handling and voltage blocking capabilities. The product line targets the growing demand for efficient power electronics in electrified transportation and industrial sectors.
Replacement Considerations
Check for direct replacements within the same onsemi SiC MOSFET family that share identical pinouts and electrical ratings. Verify compatibility with existing PCB footprints and thermal management solutions. Consult the manufacturer's substitution guide for validated alternatives if supply constraints exist.
