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The FGB5065G2-F085 is a 650 V N-Channel PTC Heater IGBT from onsemi, utilizing EcoSPARK technology. It features an integrated self-clamping inductive switching (SCIS) capability rated at 500 mJ at 25°C and 300 mJ at 150°C. The device supports logic-level gate drive with a continuous collector current of 78 A at 25°C case temperature. Packaged in a D2PAK-3 (TO-263-3), it offers a junction-to-case thermal resistance of 0.5 °C/W and operates within a junction temperature range of -55°C to +175°C.
Verify the specific ordering suffix F085 against official documentation to confirm tape and reel specifications. Confirm pending AEC-Q101 qualification status and PPAP capability requirements before finalizing procurement plans for automotive or high-reliability projects.
Select this component for designs requiring high surge energy tolerance without external clamping diodes. Ensure the gate drive voltage aligns with the logic-level specification. Verify that the thermal management system can handle the 300 W power dissipation rating at the target case temperature.
This part belongs to onsemi's EcoSPARK family of HV-HE IGBTs. It is designed specifically to handle inductive load switching transients internally, simplifying circuit design for high-power heating and motor control applications compared to standard IGBTs.
Publicly confirmed substitute part numbers are not available in the provided source material.