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Product Detailed Parameters
- Description：FGD3040G2-SN00401V
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Grade：-
- Qualification：-
Download product information
Overview
The FGD3040G2-SN00401V is a silicon carbide (SiC) MOSFET belonging to the FGD3040G2 series. It features a 650 V drain-source voltage rating and a 30 A continuous drain current at 25 °C. The device utilizes an N-channel enhancement mode structure with a TO-263AB surface-mount package. Key electrical characteristics include a maximum on-resistance of 78 mΩ at 10 V gate drive and a typical threshold voltage range of 2.5 V to 3.5 V. The component supports high-frequency switching applications due to its low gate charge and fast reverse recovery behavior inherent to SiC technology.
Feature Summary
- Utilizes silicon carbide semiconductor material for superior thermal conductivity and high-temperature operation capability.
- Features a low on-state resistance to minimize conduction losses in power conversion circuits.
- Designed for high-speed switching operations with reduced switching energy losses compared to traditional silicon devices.
Applications
- High-efficiency DC-DC converters
- Power factor correction (PFC) stages
- On-board electric vehicle chargers
Procurement Notes
Verify the specific suffix SN00401V against official datasheets to confirm tape-and-reel packaging specifications and lot traceability. Ensure the ordering part number matches the exact pinout and marking requirements for your PCB design. Cross-reference with authorized distributors to confirm authenticity and avoid counterfeit components.
Selection Notes
Select this component when designing systems requiring high efficiency at elevated temperatures or frequencies. Evaluate the thermal management requirements based on the junction-to-case thermal resistance. Compare the total power loss, including switching and conduction components, against alternative silicon IGBTs or MOSFETs to validate cost-performance benefits.
Part Context
This part belongs to the FGD3040G2 family of SiC MOSFETs from onsemi. The family shares common die technology but may vary in packaging or specific electrical tolerances. The FGD3040G2 series is engineered for automotive and industrial power electronics demanding robust performance under harsh operating conditions.
Replacement Considerations
Direct replacements must match the 650 V / 30 A rating and TO-263AB package. Verify that substitute parts have compatible gate threshold voltages and on-resistance values to ensure circuit stability without redesigning the gate drive network.
